Abstract:Understanding how foreign chemical species bond to atomic vacancies in graphene layers can advance our ability to tailor the electronic and magnetic properties of defective graphenic materials. Here we use ultra-high vacuum scanning tunneling microscopy (UHV-STM) and density functional theory to identify the precise structure of hydrogenated single atomic vacancies in a topmost graphene layer of graphite and establish a connection between the details of hydrogen passivation and the electronic properties of a single atomic vacancy. Monovacancy-hydrogen complexes are prepared by sputtering of the graphite surface layer with low energy ions and then exposing it briefly to an atomic hydrogen environment. High-resolution experimental UHV-STM imaging allows us to determine unambiguously the positions of single missing atoms in the defective graphene lattice and, in combination with the ab initio calculations, provides detailed information about the distribution of low-energy electronic states on the periphery of the monovacancy-hydrogen complexes. We found that a single atomic vacancy where each sigma-dangling bond is passivated with one hydrogen atom shows a well-defined signal from the non-bonding pi-state which penetrates into the bulk with a (\sqrt 3 \times \sqrt 3)R30^ \circ periodicity. However, a single atomic vacancy with full hydrogen termination of sigma-dangling bonds and additional hydrogen passivation of the extended pi-state at one of the vacancy's monohydrogenated carbon atoms is characterized by complete quenching of low-energy localized states. In addition, we discuss the migration of hydrogen atoms at the periphery of the monovacancy-hydrogen complexes which dramatically change the vacancy's low-energy electronic properties, as observed in our low-bias high-resolution STM imaging.

Molecular dynamics simulation of energy exchange during hydrogen collision with graphite sheet containing a vacancy

Numerical Simulation on Hydrogen Induced Cracking Behavior of 4130X Hydrogen Storage Vessel with Defect

First-principles Study on Mono-Vacancy Self Diffusion and Recovery in Tungsten Crystal

Direct imaging of monovacancy-hydrogen complexes in single graphitic layer

Effects of Monovacancy and Divacancies on Hydrogen Solubility, Trapping and Diffusion Behaviors in fcc-Pd by First Principles

Molecular Dynamics Simulation of Collisions between Hydrogen and Graphite

Tritium Storage and Release Mechanism in Nuclear Graphite Using First-Principles Combined Thermal Desorption Theory

Structure and stability of hydrogenated carbon atom vacancies in graphene

Molecular dynamics simulation for coalescence of vacancies in tungsten crystal

Physisorption of Molecular Hydrogen on Carbon Nanotube with Vacant Defects

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Hydrogen-enhanced grain boundary vacancy stockpiling causes transgranular to intergranular fracture transition

First principle study of hydrogen behavior in hexagonal tungsten carbide

Hydrogen interaction with vacancy defects in tungsten: Unraveling the influence on diffusion mechanisms and mechanical properties

Atomistic simulation of the effect of the dissolution and adsorption of hydrogen atoms on the fracture of α-Fe single crystal under tensile load

First-principles insights onto the hydrogen trapping in interstitial-vacancy complexes in vanadium carbide

Effect of Monovacancy Defects on Anisotropic Mechanical Behavior of Monolayer Graphene: A Molecular Dynamics Study

The effect of van der Waals interactions on the properties of intrinsic defects in graphite

Molecular Dynamics Simulation of Plasma Surface Interaction

Exploration of vacancy defect formation and evolution in low-energy ion implanted pure titanium

DFT Study of Cs/Sr/Ag Adsorption on Defective Matrix Graphite