Abstract:The semiconductor junctions based on piezoelectric materials are of great importance for the realization of functionality and versatility in sensing devices. Two-dimensional (2D) stacked materials provide a promising route to design novel semiconductor junctions due to their layer-dependent electronic and optical properties. However, the combination of layer-dependent band structure and piezoelectricity in device designs is rarely explored to date. In this work, we propose piezotronic transistors designed by layer engineering 2D homojunction. A 2D Poisson equation including the piezoelectric polarization is derived and then combined self-consistently with the non-equilibrium Green function to explore the carrier transport. We find a peculiar symmetrical modulation mechanism of piezotronic effect on carrier transport, i.e., flipping the sign of externally applied strain can drive symmetrical transport process regarding bias polarity. Additionally, the results show that the transport is a mixing of thermionic and tunneling current, which are comparable at low bias but predominated by the quantum tunneling effect at high bias. Although our 2D homojunction transistor is similar to Schottky diodes, the on/off ratio and gauge factors are higher than most of metal-semiconductor contact piezotronic devices. Moreover, for the device with symmetrical stacking configurations, increasing layer number in 2D homojunction can decrease the output current but enhance the gauge factors. By contrast, the device performance in asymmetrical stacking systems is insensitive to the variation of layer number. Our demonstration of layer engineering 2D homojunction transistor not only enriches the fundamental physics of piezotronics, but also open an avenue for designing highly sensitive strain sensors based on diverse 2D layered junctions.

Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction

Nonlinear Solution of a Piezoelectric PN Junction Under Temperature Gradient

Theoretical study of piezo-phototronic nano-LEDs.

Development and Progress in Piezotronics

Analysis of Piezoelectric Semiconductor Fibers under Gradient Temperature Changes

Temperature Effects on PN Junctions in Piezoelectric Semiconductor Fibers with Thermoelastic and Pyroelectric Couplings

Manipulation of a Piezoelectric P – N Junction with an Elastic Longitudinal Wave

Analysis of piezoelectric PN homojunction and heterojunction considering flexoelectric effect and strain gradient

Mechanically manipulated in-plane electric currents and thermal control in piezoelectric semiconductor films

Layer Engineering Piezotronic Effect in Two-Dimensional Homojunction Transistors

Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors

High performance piezotronic devices based on non-uniform strain

Impact of PN junction inhomogeneity on the piezoelectric fields of acoustic waves in piezo-semiconductive fibers

Energy Conversion Efficiency of a Piezo-Thermoelectric Material

Bending of PN junctions in flexoelectric semiconductors

PYROELECTRIC AND THERMAL STRAIN EFFECTS OF PIEZOELECTRIC (PVDF AND PZT) DEVICES

A 1D nonlinear model for piezoelectric semiconductor fibers incorporating thermal and thermoelectric effects

Thermally Induced Carrier Distribution in a Piezoelectric Semiconductor Fiber

Temperature induced electrical transport in n-Bi2Te3/p-InAs thermoelectric heterojunctions

Temperature Dependence of the Piezotronic Effect in ZnO Nanowires.

Thermally Induced Electromechanical Fields in Unimorphs of Piezoelectric Dielectrics and Nonpiezoelectric Semiconductors