Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect
Yanhao Wang,Wei Zheng,Hao Ji,Depeng Shen,Yuhai Zhang,Yingkuan Han,Jianwei Gao,Le Qiang,Hong Liu,Lin Han,Yu Zhang
DOI: https://doi.org/10.1002/admi.202100279
IF: 5.4
2021-05-09
Advanced Materials Interfaces
Abstract:<p>CsPbBr<sub>3</sub>, as an all‐inorganic perovskite, has attracted considerable research interest due to its excellent optoelectronic properties. However, because the electronic properties of CsPbBr<sub>3</sub> are not satisfactory, the relatively low on/off ratio and long photoresponse time of CsPbBr<sub>3</sub> devices limit further applications. In this work, a CsPbBr<sub>3</sub> device with high performance is successfully fabricated through a simple process using a CsPbBr<sub>3</sub> colloid, and the photoresponse performance of the device is investigated under different external factors. By inserting a thin HfO<sub>2</sub> layer, CsPbBr<sub>3</sub>‐based heterostructure devices exhibit much better performances, including an enhanced photocurrent of ≈10 µA, a responsivity of 45.05 A W<sup>−1</sup>, a detectivity of 9.12 × 10<sup>10</sup> Jones, an external quantum efficiency of 12445%, and rise/fall times of 600 µs/300 µs, respectively. A physical mechanism is proposed to explain the photoresponse property promotion in CsPbBr<sub>3</sub> devices, which can be attributed to the tunneling effect between CsPbBr<sub>3</sub> and Si through the thin HfO<sub>2</sub> layer. More importantly, the optoelectrical properties of the proposed CsPbBr<sub>3</sub>/HfO<sub>2</sub>/Si heterostructure device can be modulated through both <i>V</i><sub>ds</sub> and <i>V</i><sub>gs</sub>. This work offers a valuable strategy and a practical scheme that can be generalized to other perovskite and heterostructure devices.</p>
materials science, multidisciplinary,chemistry