Abstract:The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca, Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These elements are needed in different high tech applications but are challenging for ALD. Their precursor design needs careful balancing between volatility, thermal stability and reactivity—the key properties of ALD precursors. The extensive studies showed that cyclopentadienyl based precursors of alkaline earth metals are versatile ALD precursors which react with both water and ozone forming oxide. Group 4 ALD chemistry has been studied very widely and many good precursors have been found for the oxide ALD. From a bunch of different compound types studied the most promising ALD precursor for bismuth is Bi(OCMe2iPr)3 which shows stable ALD process with water at 150–250°C. The success in depositing noble metal films by ALD can be attributed more to the reactant rather than the metal precursor. Ru, Pt, Ir, Rh and Os films can be deposited from various organometallic and metal organic precursors using O2 as the other precursor. Typically temperatures above 225°C are needed. Using O3 as a reactant films can be deposited at lower temperatures. Noble metal oxides are obtained below approx. 200°C and metallic films above that. By supplying both O3 and H2 as consecutive pulses, noble metal films can be deposited well below 200°C. For silver phosphine stabilized carboxylato and β-diketonato complexes are thermally stable enough enabling hydrogen plasma enhanced ALD of silver metal films. Alkylsilyl compounds of selenium and tellurium are versatile ALD precursors for metal selenide and telluride films when combined with metal chloride precursors. The use of alkylsilyl compounds is not limited to group 16 elements but can also been used for group 15.

Phosphites as precursors in atomic layer deposition thin film synthesis

Ionothermal Synthesis and Characterization of Two Zinc Phosphates from a Protic Ionic Liquid

Facile room-temperature synthesis of layered transition metal phosphonates via hitherto unknown alkali metal tert-butyl phosphonates

Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

Co‐templating Ionothermal Synthesis and Crystal Structure of a New Layered Aluminophosphate from a Protic Deep Eutectic Solvent

Triacylphosphines as a Novel Class of Phosphorus Sources for the Synthesis of Transition Metal Phosphide Nanoparticles

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Precursors as enablers of ALD technology: Contributions from University of Helsinki

Triacylphosphines as Phosphorus Sources for the Synthesis of Transition Metal Phosphide Nanoparticles

Layer-by-layer Grafting of Titanium Phosphate Onto Mesoporous Silica SBA-15 Surfaces: Synthesis, Characterization, and Applications.

Perovskite thin films via atomic layer deposition.

Decarboxylative Selective Phosphorylation of Aliphatic Acids: A Transition-Metal- and Photocatalyst-Free Avenue to Dialkyl and Trialkyl Phosphine Oxides from White Phosphorus

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

A series of novel phosphites/phosphates with deep-ultraviolet cut-off edges from 0D polar to 3D non-polar architectures

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

Solid-State Synthesis of Aluminophosphate Zeotypes by Calcination of Amorphous Precursors

A Facile Layer-by-Layer Adsorption and Reaction Method to the Preparation of Titanium Phosphate Ultrathin Films

Organometallic Precursors for Atomic Layer Deposition

Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources