Abstract:Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI3, Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X = Cl and Br) have attracted considerable attention due to their potential application in spintronics. Despite few experimental studies, theoretical studies reported that 2D chromium dichalcogenide (CrS2) materials show unique properties such as valley polarization, piezoelectric coupling, and phase dependent intrinsic magnetic properties. Here, we report for the first time the synthesis of 2D layered CrS2 flakes down to the monolayer via the chemical vapor deposition (CVD) method, its phase structures and electronic properties. We observed the 2H, 1T, and 1T' phases coexisting in CVD grown monolayer CrS2. The formation of 1T' phases from 1T phases is described by dimerization of metal atoms at room temperature according to our molecular dynamics studies. The coexistence of 1T and 1T' phases with 2H phases is referred to as the 1T and 1T' puddling phenomenon. We theoretically showed that the monolayer 2H-CrS2 is a direct bandgap semiconductor with a gap of approximately 0.95 eV predicted by the PBE functional, while the 1T- and 1T'-CrS2 are metallic and semi-metallic with approximately 10 meV gap, respectively. Furthermore, 2H CrS2 exhibits nonmagnetic semiconducting properties while for ferromagnetic spin configuration, the 1T and 1T' CrS2 show magnetic characteristics with 0.531μB and 2.206μB magnetic moment per Cr atom respectively, for ferromagnetic spin configuration as predicted from DFT+U calculation. Importantly, CrS2-based field-effect transistors exhibit a p-type behavior. Our study would stimulate further exploration of 2D layered CrS2 with astonishing properties and open up a whole new avenue for the urgent need for developing multifunctional 2D materials for nanoelectronics, valleytronics, and spintronics.

Crystal Growth of the Quasi-2D Quarternary Compound AgCrP2S6 by Chemical Vapor Transport

Tuning Magnetic and Transport Properties in Quasi-2D (mn1−xnix)2p2s6 Single Crystals

Epitaxial Growth of Large-Grain-size Ferromagnetic Monolayer CrI3 for Valley Zeeman Splitting Enhancement

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Magnetic Ordering and Exchange Striction Stabilized Geometric Ferroelectricity in Multiferroic AgCrS2.

Crystal Growth and Anisotropic Magnetic Properties of RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) Single Crystals

Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Crystal Growth of Gd2PdSi3 Intermetallic Compound

Crystal Growth and Physical Properties of SrCu2As2, SrCu2Sb2 and BaCu2Sb2

The Growth of V5S8 Single Crystals by Chemical Vapour Transport

Adsorption Tuning of Polarity and Magnetism in AgCr2S4 Monolayer

2D growth of high-quality magnetic CuCr2Se4 crystals with a high Curie temperature

Anisotropic magnetoelectric transport in AgCrSe 2 single crystals

Stoichiometric two-dimensional non-van der Waals AgCrS 2 with superionic behaviour at room temperature

Epitaxial Growth of Two-Dimensional Nonlayered AuCrS2 Materials Via Au-Assisted Chemical Vapor Deposition.

The growth mechanism of PtS2 single crystal

Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr 2 S 3 Nanosheets.

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition