Abstract:Novel topological semimetals, exemplified by NbIrTe4, have opened new avenues in terahertz technology, driven by their intriguing non‐equilibrium properties. This study highlights the selective growth of NbIrTe4 and vdW stacking to form heterostructures, enabling self‐powered terahertz photodetection at room temperature. The results reveal remarkable performance with high responsivity, low noise, and fast response, offering promising prospects in terahertz photon harvesting. The emergence of novel topological semimetal materials, accompanied by exotic non‐equilibrium properties, not only provides a fertile playground for a fundamental level of interest but also opens exciting opportunities for inventing new applications by making use of different light‐induced effects such as nonlinear optics, optoelectronics, especially for the highly pursued terahertz (THz) technology due to the gapless electronic structures. Exploring type‐II Weyl semimetal endowed with the richness of quantum wavefunction and peculiar band structure, underlie strong nonlinear coupling with THz waves. Here, the selective growth of type‐II Weyl semimetal NbIrTe4 by means of a self‐flux approach is reported, which hosts strongly tilted Weyl cones and exotic Fermi arcs. The oscillating THz field induced by the antenna is engineered in terms of planar metal‐topological semimetal‐metal structure, along with van der Waals stacking, which allows for self‐powered photodetection at room temperature. The results elucidate the superior performance of NbIrTe4‐graphene heterostructure‐based photodetectors with responsivity up to 264.6 V W−1 at 0.30 THz, fast response of 1 μs as well as low noise equivalent power ˂0.28 nW Hz−0.5 is achieved, already exhibiting high‐quality imaging at THz frequency. The results promise superb impacts in exploring topological Weyl semimetals for efficient low‐energy photon harvesting.

Terahertz detection based on nonlinear Hall effect without magnetic field

Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi2Te4.

Terahertz Nonlinear Hall Rectifiers Based on Spin‐Polarized Topological Electronic States in 1t‐cote 2

Terahertz Nonlinear Hall Rectifiers Based on Spin‐Polarized Topological Electronic States in 1T‐CoTe <sub>2</sub> (Adv. Mater. 10/2023)

Nonlinear photocurrent in quantum materials for broadband photodetection

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Broadband terahertz detector based on topological insulator heterojunction

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PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Low-Power Polarization Sensitive Terahertz Photodetection Driven by Ternary Type-II Weyl Semimetal NbIrTe4

Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Orbital Kerr effect and terahertz detection via the nonlinear Hall effect

Strong Terahertz Response in Quantum Well Photodetector Based on Intradonor Transition by Magnetic Field

Ultrasensitive and Self‐Powered Terahertz Detection Driven by Nodal‐Line Dirac Fermions and Van der Waals Architecture

Selective Growth of Type‐II Weyl‐Semimetal and Van der Waals Stacking for Sensitive Terahertz Photodetection

High sensitivity HgTe room temperature terahertz photodetector

Giant Nonlinear Hall and Wireless Rectification Effects at Room Temperature in the Elemental Semiconductor Tellurium

High Performance of Room-Temperature NbSe2 Terahertz Photoelectric Detector.

Colossal Room‐Temperature Terahertz Topological Response in Type‐II Weyl Semimetal NbIrTe4

Carbon nanotube terahertz detector.

Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4