Properties of ZnO with Oxygen Vacancies and Its Application in Humidity Sensor

Liyan Niu,Sulei Hong,MaoHua Wang
DOI: https://doi.org/10.1007/s11664-021-08966-w
IF: 2.1
2021-05-19
Journal of Electronic Materials
Abstract:Zinc oxide is one of the most popular oxide semiconductor materials. We have developed an exquisite and simple method for preparing ZnO with oxygen vacancies. X-ray diffraction, UV–Vis absorption spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy and photoluminescence spectroscopy confirmed the existence of oxygen vacancies and the narrowing of the band gap. The optical band gap value is reduced from 3.28 eV to 3.07 eV. The modified ZnO has a different morphology from that of pure ZnO. The roughness of the sample is significantly increased and the size is reduced, and it shows better humidity performance. The results showed that modification with 0.5 M sodium borohydride increases the concentration of oxygen vacancy defects on the surface of ZnO, thus improving the sensitivity of the humidity sensor using the modified ZnO. We attributed this performance to the presence of oxygen vacancies and the increase in roughness, thereby enhancing dissociation and electrolytic conduction to provide more active sites for attachment. This study reveals the effect of reducing agents on regulating defects in metal-oxide semiconductor materials.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
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