Synthetic Scheme for High-Quality InAs Nanocrystals Based on Self-Focusing and One-Pot Synthesis of InAs-based Core-Shell Nanocrystals.
Renguo Xie,Xiaogang Peng
DOI: https://doi.org/10.1002/anie.200802867
2008-01-01
Angewandte Chemie
Abstract:Synthetic chemistry of colloidal semiconductor nanocrystals (quantum dots) has attracted substantial interest in recent years. A key concept for formation of nearly monodisperse nanocrystals, namely focusing of size distribution, was discovered upon studying the growth of high-quality CdSe quantum dots. This concept implies that if all nuclei are formed in the beginning and stop growing promptly, as triggered by a decrease in monomer concentration or lower reaction temperature, the subsequent growth process will focus the size distribution of the nanocrystals. This is so because the smaller nanocrystals should grow faster by consuming the residual dissolved monomer if the monomer concentration is higher than the solubility of all nanocrystals in the solution. The key feature of this method is the constant particle concentration during particle growth. Computer simulations revealed that the size distribution of nanocrystals could also be focused through Ostwald ripening, but the final size distribution would still be quite broad. Herein, we demonstrate that InAs nanocrystals with well-controlled size and size distribution can be formed by a special ripening process, called self-focusing of size distribution (in short, selffocusing). Different from traditional focusing of size distribution, the particle concentration decreases drastically in the growth process, and the monomers are driven from small nanocrystals to larger ones by interparticle diffusion, owing to solubility gradients between neighboring nanoparticles. An additional feature is that the temperature for self-focusing is much higher than the nucleation temperature. To our knowledge, this is the first time that interparticle diffusion and self-focusing have been purposely employed for the controlled synthesis of nanocrystals. High-quality InAs nanocrystals are likely the best candidates for quantum-dot emitters in the near infrared (NIR) window (700–1400 nm) among II–VI, III–V, and IV–VI semiconductor nanocrystals if Class A elements, such as Cd, Hg, and Pb, are excluded. NIR emitters are important for both in vivo biomedical imaging and telecommunications. Because of the extreme sensitivity of InAs nanocrystals to air oxidation and the large exciton size, such NIR emitters should be epitaxially coated with other types of wideband-gap semiconductors. Given the narrow bulk band gap of InAs (ca. 0.4 eV), core nanocrystals of this material for building core–shell nanocrystals that emit in NIR range should be smaller than roughly 3 nm. Experimental details are provided as Supporting Information; a brief procedure is as follows. A mixture of indium stearate (0.4 mm), trioctylphosphine (0.5 mL), and octadecene (ODE, 3.5 mL) was heated to 150 8C under an argon flow. As(Si(CH3)3)3 solution made in the glove box (ca. 0.1 mmol) was introduced into the reaction solution, and the reaction was held at 150 8C for a couple of minutes to convert all arsenic precursors to InAs nanoclusters. Subsequently, the reaction solution was heated to a desired temperature (up to 300 8C) for the growth of InAs nanocrystals with different sizes. Synthesis of III–V quantum dots has been a challenging task, 12,13–21] and their development lags substantially behind that of their II–VI and IV–VI analogues. The synthetic procedure described above was developed after our failed efforts to extend the recently developed synthetic scheme for InP nanocrystals to InAs. Comparing InAs quantum dots with those made of InP, initial efforts revealed that the more reactive precursor (As(Si(CH3)3)3 vs. P(Si(CH3)3)3) always generated small nanoclusters (less than 1 nm) with a fixed spectrum using the same synthetic scheme as for InP (see the Supporting Information, Figure 1S). Elimination of the activation reagent (fatty amine) and addition of free fatty acids as inhibitors still yielded magic-sized nanoclusters with two distinguishable and persistent absorption peaks at 420 and 460 nm (the first spectrum in all plots in the left panel of Figure 1). Interestingly, the particle concentration was found to decrease by adding free fatty acid to the reaction system. When the fatty acid concentration was high, some grayish deposition (likely arsenic metal) on the dry part of the reaction flask was observed. Similarly, at high reaction temperatures, the intensity of the two peaks at 420 and 460 nm decreased as the reaction temperature increased. Furthermore, the particle concentration did not increase by using excess indium stearate. Because of the high reactivity of the arsenic precursor, almost immediately after the reaction started, all molecular arsenic species would be consumed by either forming InAs nanoclusters or being decomposed (decomposition was accelerated by the presence of fatty acids and by high temperature). The direct consequence of this conclusion is [*] Dr. R. G. Xie, Prof. X. G. Peng Department of Chemistry and Biochemistry University of Arkansas, Fayetteville, AR 72701 (USA) Fax: (+1)479-575-4049 E-mail: xpeng@uark.edu