Inverse spin-Hall effect in GeSn

A. Marchionni,C. Zucchetti,F. Ciccacci,M. Finazzi,H. S. Funk,D. Schwarz,M. Oehme,J. Schulze,F. Bottegoni
DOI: https://doi.org/10.1063/5.0046129
IF: 4
2021-05-24
Applied Physics Letters
Abstract:Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising candidate for the integration of spintronics, photonics, and electronics. Here, we investigate the photoinduced inverse spin-Hall effect in a GeSn alloy with 5% Sn concentration. We generate a spin-polarized electron population at the Γ point of the GeSn conduction band by means of optical orientation, and we detect the inverse spin-Hall effect signal coming from the spin-to-charge conversion in GeSn. We study the dependence of the inverse spin-Hall signal on the kinetic energy of the spin-polarized carriers by varying the energy of the impinging photons in the 0.5 – 1.5   eV range. We rationalize the experimental data within a diffusion model which explicitly accounts for momentum, energy, and spin relaxation of the spin-polarized hot electrons. At high photon energies, when the spin relaxation is mainly driven by phonon scattering, we extract a spin-Hall angle in GeSn which is more than ten times larger than the one of pure Ge. Moreover, the spin–charge interconversion for electrons lying at the Δ valleys of GeSn results to be ≈ 4.3 times larger than the one for electrons at L valleys.
physics, applied
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