Abstract:Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de- oxidation of the III-V semiconductor surface) in an epitaxy system. Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 $^{\circ}$C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters ($\leq$ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Morphology and diameter controllable synthesis of boron nanowires

Monte carlo simulation of planar GaAs nanowire growth

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Early stages of GaAs nanowires VLS self-catalyzed growth on silica-terminated silicon substrate: A photoemission study

Growth of GaAs nanowires on Au, Au / Pd, Ag, Ni, Ga, Cu, Al, Ti metal films

Phase Selection in Self-catalyzed GaAs Nanowires

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires

Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Controllable Ga/Ga 2 O 3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

Nonpolar GaAs Nanowires Catalyzed by Cu 5 As 2 : Insights into As Layer Epitaxy