Abstract:The development of disruptive artificial neural networks (ANNs) endowed with brain-inspired neuromorphic capabilities is emerging as a promising solution to deal with the challenges of the artificial intelligence era. The fabrication of robust and accurate ANNs is strongly associated with the design of new electronic devices. The intriguing properties of memristors render them suitable as building blocks within ANNs. However, the impact of the operating electrodes on the dynamics of the switching process and the relaxation effect remains elusive. It is, thus, apparent that a deep understanding of the underlying electrochemical metallization mechanism that affects the formation of the conductive filament is of great importance. Along these lines, in this work, the impact of various materials as inert electrodes (Pt NPs, ITO, n++ Si, TiN, and W) on tuning the switching mode of low power SiO2-based conductive bridge random access memory devices was systematically investigated. A comprehensive model was applied to interpret the threshold and bipolar switching patterns and shed light on the respective physical mechanisms. The model incorporated the different coefficients of thermal conductivity of the various materials and attempted to associate them with the Soret coefficient and the activation energy of thermophoresis to interpret the experimental outcomes. Our work provides valuable insight for the realization of memristive devices with tunable properties, which can be directly leveraged for implementing a variety of neuromorphic functionalities, such as synaptic plasticity and spike generation.

Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits

Memristive response and capacitive spiking in the aqueous ion transport through 2D nanopore arrays

Memristive Response and Capacitive Spiking in Aqueous Ion Transport through Two-Dimensional Nanopore Arrays

Synaptic-Like Plasticity in 2D Nanofluidic Memristor from Competitive Bicationic Transport

Memristive Characteristics in an Asymmetrically Charged Nanochannel

A biology-inspired model for the electrical response of solid state memristors

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels

Modeling of memory effects in nanofluidic diodes

Observation, Characterization and Modeling of Memristor Current Spikes

Memristor-based model of neuronal excitability and synaptic potentiation

Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing

Emergent spiking in non-ideal memristor networks

Iontronic Neuromorphic Signaling with Conical Microfluidic Memristors

Memory Device Based on MoS 2 -Polyvinyl Alcohol for Simulating Synaptic Behavior

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

A simple mathematical theory for Simple Volatile Memristors and their spiking circuits

Advanced iontronic spiking modes with multiscale diffusive dynamics in a fluidic circuit

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Connecting Spiking Neurons to a Spiking Memristor Network Changes the Memristor Dynamics