Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

Fabio Signorelli,Fabio Telesca,Enrico Conca,Adriano Della Frera,Alessandro Ruggeri,Andrea Giudice,Alberto Tosi
DOI: https://doi.org/10.1109/jstqe.2021.3104962
IF: 4.9
2022-03-01
IEEE Journal of Selected Topics in Quantum Electronics
Abstract:We present the design and the experimental characterization of a new InGaAsInP single-photon avalanche diode (SPAD), with two different diameters: i) a 10 m device, suitable for optical fiber-based quantum applications; ii) a 25 m one, more appropriate for free-space applications. Compared to a previous generation, we improved the design of the double zinc diffusion and optimized the layer structure. We achieved low dark count rate, around 1 kcps and 4 kcps at 225 K and 5 V excess bias for 10 m and 25 m devices, respectively, and down to few tens of counts per seconds at 175 K for the 10 m detector. At 5 V excess bias and 225 K temperature, both devices also show a high photon detection efficiency (33 at 1064 nm, 31 at 1310 nm and 25 at 1550 nm for the 10 m SPAD). Afterpulsing has been measured with a custom readout integrated circuit, achieving very low probability values. Timing jitter is comparable to previous-generation devices.
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