Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America

N-Type Doping to an Active-Short Cavity DBR Laser to Expand Its Continuous Tuning Range

A wavelength-tunable short-cavity DBR laser with active distributed Bragg reflector

Wavelength-Tunable Short-Cavity DBR Laser Array With Active Distributed Bragg Reflector

Experimental study of nanosecond-order wavelength switching in short-cavity DBR lasers

Tunable V-Cavity Laser with Butt-Joint Passive Tuning Section for Fast Wavelength Switching

Experimental demonstration of a widely tunable two-section DFB laser

Tunable laser source for fast wavelength switching using a short-cavity DBR laser packaged with wavelength locker

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Tunable V-Cavity Semiconductor Laser And Modules

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Tunable Single-Frequency Ytterbium-Doped Fiber BDR Laser

Monolithic tunable lasers for low cost DWDM networks

Double Half-Wave-Coupled Rectangular Ring-Fp Semiconductor Laser With 19-Nm Quasi-Continuous Tuning Range

Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Wide-wavelength-range and high-output-power short-cavity DBR laser array with active distributed Bragg reflector