Abstract:Various physical phenomena have been discovered by tuning degrees of freedom, among which there is the "valley" degree of freedom (DOF). The typical valley materials are characterized by two degenerate valley states protected by time-reversal symmetry (TS). These states indexed by valley DOF have been measured and manipulated for emergent valley-contrasting physics with the broken valley degeneracy. To achieve the valley splitting resulting from TS breaking, previous studies have mainly focused on the magnetic proximity effect provided by the ferromagnetic layer. In contrast, the antiferromagnetic (AFM) proximity effect on the valley degeneracy has not been widely investigated systematically. In this work, we construct the composite systems consisting of a transition-metal dichalcogenide monolayer and a proximity layer with specific intraplane AFM configurations. We extend the three-band model to describe the valley states of such systems. It is shown that either "time-reversal + fractional translation" or "mirror" symmetry can protect the valley degeneracy. Additionally, first-principles calculations based on density functional theory (DFT) have been performed to verify the results obtained from the extended tight-binding (TB) model. The corresponding mechanism of the valley splitting/degeneracy is revealed through the nondegenerate perturbation. Meanwhile, an extra condition is proposed to keep the well-defined valley states disentangled from each other through two negative examples based on degenerate perturbation. Further DFT studies on the effects of the Ueff and interlayer distance are performed. Manipulating the magnetization of Mo is shown to be feasible and effective for controlling the valley splitting with the direct overlap tuned by Ueff and the interlayer distance. The TB method introduced in the present work can properly describe the low-energy physics of valley materials that couple to the proximity with complex magnetic configurations. The results considerably expand the range of qualified proximity layers for valley splitting, enabling more flexible manipulation of valley degree.

Tuning Valley Degeneracy with Band Inversion

Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields

Impact of Valley Degeneracy on Thermoelectric Properties of Zigzag Graphene Nanoribbons with Staggered Sublattice Potentials and Transverse Electric Fields

Topological Refraction in Dual-Band Valley Sonic Crystals

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Valleytronics in transition metal dichalcogenides materials

Tunable valley splitting and anomalous valley Hall effect in VTe<sub>2</sub>/Ga<sub>2</sub>S<sub>3</sub> heterostructures

Valley polarization of Landau levels driven by residual strain in the ZrSiS surface band

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Optical valley separation in two-dimensional semimetals with tilted Dirac cones

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Valley polarization generated in 3-dimensional group-IV monochalcogenids

Multiple Valley Modulations in Noncollinear Antiferromagnets

Valley Pseudospin with A Widely Tunable Bandgap in Doped Honeycomb Bn Monolayer

Valleytronics in Thermoelectric Materials

Symmetry-dependent Antiferromagnetic Proximity Effects on Valley Splitting

Tuning the valley depolarization dynamics in selenium and vanadium alloyed monolayer

Valleytronics in two-dimensional materials with line defect

Achieving ultra-high power factor in Sb2Te2Se via valence band convergence

Tuning the degeneracy order of Dirac-like point by valley engineering in phononic and photonic superlattices

Valley-Dependent Optoelectronics From Inversion Symmetry Breaking