Abstract:Transparent ferroelectrics, with promising prospects in transparent optoelectronic devices, have unique advantages in self-powered photodetection. The self-powered photodetectors based on the photovoltaic effect have quicker responses and higher stability compared with those based on the pyroelectric effect. However, the ferroelectric ceramics previously applied are always opaque and have no infrared light-stimulated photovoltaic effect. Thus, it would be very meaningful to design photodetectors based on infrared light-stimulated photovoltaic effect and/or transparent ferroelectric ceramics. In this work, highly optical transparent pristine lead lanthanum zirconate titanate (PLZT) and band gap-engineered Ni-doped PLZT ceramics with excellent piezoelectric/ferroelectric properties were prepared by hot-pressing sintering. Stable and excellent photovoltaic performance was obtained for pristine PLZT and band gap-engineered PLZT. The value of short-circuit current density is at least 2 orders of magnitude larger than those in PLZT reported in previous works. The transparent PLZT and Ni-doped PLZT ferroelectric ceramics are applied as self-powered photodetectors for the first time for 405 nm and near-infrared light, respectively. The devices based on PLZT under 405 nm light exhibit high detectivity (7.15 × 107 Jones) and quick response (9.5 ms for rise and 11.5 ms for decay), and those devices based on Ni-doped PLZT, under near-infrared light filtered from AM 1.5 G simulated sunlight, also exhibit high detectivity (6.86 × 107 Jones) and short response time (8.5 ms), both presenting great potential for future transparent photodetectors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09991?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09991</a>.Photos of PLZT8 and PLZT9, microstructure and composition of PLZT9 and PLZTN9, influence of temperature on relative permittivity (εr) and dielectric loss (tan δ) of the four materials in this article, curves of (αhν)2 versus hν, J–V (current density vs voltage) curves of PLZTN9 illuminated by 405 nm light, and J–V and J–t curves of PLZTN9 and PLZT8 under 1300 nm light (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09991/suppl_file/am0c09991_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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