Abstract:This special issue on Advances in Quantum Transport covers important contributions from researchers in the field of electron transport in condensed matter systems. We are in the second generation of quantum revolution where the fundamental aspects of quantum physics in semiconductors can be exploited for technological applications. This has stimulated extensive research activities in solid state quantum devices in search of new schemes which are now more accessible than before due to technological advancement in semiconductor processing as well as in the growth of high quality materials. New quantum features are being investigated in semiconductors in two, one and zero dimensions to unravel existing theoretical predictions as well as finding new effects. In this special issue we have attempted to cover some of the recent advances in quantum transport in low dimensional semiconductors and related fields. Gul et al showed the first observation of fractional quantisation of differential conductance in germanium based quantum wires in one-dimension without any quantising magnetic field. They showed that hole transport in one-dimensional (1D) quantum wires in strained germanium grown by reduced pressure chemical vapour deposition exhibited quantised conductance with plateaus at n 2 e 2 / h , where n is an integer, e is the fundamental unit of charge and h is Planck's constant. At lower carrier concentration of holes, the authors found to their surprise a plateau at 1/4(2 e 2 / h ) reduced to a spin polarised plateau at 1/8(2 e 2 / h ) in the presence of a strong parallel magnetic field. This unexpected result indicates that the system is possibly behaving as if charge was fractionalised with values e /2 and e /4 [ 1 ]. Exploiting 1D quantum wires based on GaAs, Yan et al showed how transverse electron focusing can be used for controlled monitoring of spin polarization within the 1D channel. The authors proved experimentally an existing theoretical proposal of length dependent spin polarisation in 1D quantum wires via transverse electron focusing. The polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain single peak in comparison to unpolarised electrons where both odd and even peaks are single peaks; each sub-peak represents the population of a spin state. The authors argue that the spin orbit interactions in the 2D regime is enhanced as a consequence of injection of polarised 1D electrons, therefore, the scheme may open up a new regime of spin-engineering for possible spintronics applications [ 2 ]. Low-dimensional semiconductors with a control on spin degree of freedom are promising for spintronics devices. Motivated by this, Karlsson et al performed simulations of electronic states and effects of lateral spin–orbit coupling (LSOC) in an asymmetrically biased 1D nanowire with Dirac short-range interactions. Karlsson et al found the appearance of spin polarization at finite source-drain bias. They suggested electrons under the finite bias arrange themselves spontaneously into spin rows in the wire due to electron interactions leading to a finite spin polarization. Karlsson et al concluded that the orientation of the spin rows or polarization is LSOC dependent under finite source-drain bias. Their theoretical work of bias dependent spin polarization would be of interest to those working in spin physics [ 3 ]. Materials with large SO such as InGaAs are promising due to their potential for spintronics. However, high quality growth of these materials in comparison to GaAs still remains challenging. Gul et al have investigated quantum transport properties of molecular beam epitaxy grown In 0.75 Ga 0.25 As 1D channel realised using split gate devices. They observed ballistic transport characteristics with clear quantised conductance plateaus up to 6(2 e 2 / h ) at a measurement temperature of 50 mK and performed dc source-drain bias subband spectroscopy. They noted that for asymmetric gate biasing, a lateral spin–orbit coupling effect was weak, and the measured g -factor in the 1D channel was ~6.5 in the lowest subband [ 4 ]. Manipulating spins in a 0D system for quantum computing application, Milivojević theoretically analysed spin–orbit interaction in triple quantum dots as a source of spin–orbit leakage from the qubit space. In quantum computation schemes which are exchange driven, spin–orbit interaction is an undesired effect. The author has also analysed CNOT gates and suggested a scheme for the minimisation of leakage in cases where interacting -Abstract Truncated-

Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field

Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure

Nonlinear electron mobility due to asymmetric doping in V-shaped double quantum well FET structure

Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Effect of Non-Square Potential Profile on Three Subband Electron Mobility in AlGaAs Quantum Well Structures

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Field-Dependent THz Transport Nonlinearities in Semiconductor Nano Structures

Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs herostructures

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Special issue on advances in quantum transport