Abstract:This paper extends a previous model for p-i-n GaAs quantum dot solar cells (QDSC) by revising the equation of photocarrier generation rate in quantum dots (QDs) inside the intrinsic region. In our model, we address a notable discrepancy that arose from the previous model where they did not consider the volume of QDs within the intrinsic region, leading to an overestimation of the photocarrier generation rate. Our present model rectifies this by incorporating the volume of quantum dots, resulting in adjustments to the photocarrier generation rate. Additionally, we determine the absorption coefficient of the QDs based on Mie theory for different diameter sizes considering the constant volume fraction of the total number of QDs in the intrinsic region. We observe in our analysis that the absorption spectra of the QDs and host material may overlap in certain cases, although the previous model assumed no overlap. This finding suggests the need for caution when evaluating spectral overlap: if the spectra do not overlap, both the previous and current modified models can be reliably applied. However, in cases of overlap, careful consideration is required to ensure accurate predictions of photocarrier generation. Furthermore, investigating the effect of QD diameter size on the photocarrier generation rate in the intrinsic region, we find that smaller QD sizes result in a higher absorption coefficient as well as a higher generation rate for a constant volume of QDs in the region. Moreover, we establish the optimization of the QDs array size by varying the size and the total volume of QDs to improve the generation rate. Our analysis reveals that a higher volume of QDs and a smaller size of QDs result in the maximum generation rate. From an experimental perspective, we propose that the optimal arrangement of QDs in such solar cells is a 0.5 volume fraction with a QD diameter of 2 nm.

Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors

Modeling of dark current in semispherical quantum dot structures for infrared photodetection

Modeling and characterization of carrier mobility for truncated conical quantum dot infrared photodetectors

J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)

Effects of electron correlation on the photocurrent in quantum dot infrared photodetectors

Quantum scattering engineering for the reduction of dark current in very long wavelength quantum well infrared photodetector

Exploring the effects of diameter and volume fraction of quantum dots on photocarrier generation rate in solar cells

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

The Effect of Quantum Dots on the Performance of the Solar Cell

Modeling of light absorption in self-assembled truncated conical quantum dot structures

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Impact of dark current on pinned photo-diode capacitance of CMOS image sensor in low illumination regime

Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate

Origin and suppression of dark current for high-performance colloidal quantum dot short-wave infrared photodetectors

Effect of traps on carrier transport in CdSe quantum dot thin films

Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors*

Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells