Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material

H.-T. Wang,M. K. Srivastava,C.-C. Wu,S.-H. Hsieh,Y.-F. Wang,Y.-C. Shao,Y.-H. Liang,C.-H. Du,J.-W. Chiou,C.-M. Cheng,J.-L. Chen,C.-W. Pao,J.-F. Lee,C. N. Kuo,C. S. Lue,M.-K. Wu,W.-F. Pong
DOI: https://doi.org/10.1038/srep40886
IF: 4.6
2017-01-20
Scientific Reports
Abstract:X-ray scattering (XRS), x-ray absorption near-edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of the high-quality Sr3Ir4Sn13 (SIS) single crystal below and above the transition temperature (T* ≈ 147 K). The evolution of a series of modulated satellite peaks below the transition temperature in the XRS experiment indicated the formation of a possible charge density wave (CDW) in the (110) plane. The EXAFS phase derivative analysis supports the CDW-like formation by revealing different bond distances [Sn1(2)-Sn2] below and above T* in the (110) plane. XANES spectra at the Ir L3-edge and Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and a nearly constant density of Sn 5p-derived states at temperatures T < T* in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the CDW-like phase in the SIS single crystal.
multidisciplinary sciences
What problem does this paper attempt to address?