Abstract:Mg3Sb2-based materials, part of the Zintl compound family, are known for their low thermal conductivity but face challenges in thermoelectric applications due to their low energy conversion efficiency. This study addressed these limitations through first-principles calculations using the CASTEP module in Materials Studio 8.0, aiming to enhance the thermoelectric performance of Mg3Sb2 via strategic doping. Density functional theory (DFT) calculations were performed to analyze electronic properties, including band structure and density of states (D.O.S.), providing insights into the influence of various dopants. The semiclassical Boltzmann transport theory, implemented in BoltzTrap (version 1.2.5), was used to evaluate key thermoelectric properties such as the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and electronic figure of merit (eZT). The results indicate that doping significantly improved the thermoelectric properties of Mg3Sb2, facilitating a transition from p-type to n-type behavior. Bi doping reduced the band gap from 0.401 eV to 0.144 eV, increasing carrier concentration and mobility, resulting in an electrical conductivity of 1.66 × 106 S/m and an eZT of 0.757. Ge doping increased the Seebeck coefficient to −392.1 μV/K at 300 K and reduced the band gap to 0.09 eV, achieving an electronic ZT of 0.859 with low thermal conductivity (11 W/mK). Si doping enhanced stability and achieved an electrical conductivity of 1.627 × 106 S/m with an electronic thermal conductivity of 11.3 W/mK, improving thermoelectric performance. These findings established the potential of doped Mg3Sb2 as a highly efficient thermoelectric material, paving the way for future research and applications in sustainable energy solutions.

Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure

Comparison of Sb2O3 and Sb2O3/SiO2 Double Stacked pH Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structure

Comparison of ZnO, Al2O3, AlZnO, and Al2O3-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures

Comparison of NH3 and N2O Plasma Treatments on Bi2O3 Sensing Membranes Applied in an Electrolyte–Insulator–Semiconductor Structure

Improving Energy Storage Performance of Barium Titanate-Based Ceramics by Doping MnO2

Effect of Mg on the Dielectric and Electrical Properties of BaTiO 3 -Based Ceramics

Realizing fourfold enhancement in conductivity of perovskite Li0.33La0.557TiO3 electrolyte membrane via a Sr and Ta co-doping strategy

Effect of Magnesium Doping on the Growth and Dielectric Properties of (pb,sr)tio3 Thin Films Deposited by Rf Magnetron Sputtering

Interface Studies And Electronic Properties Of Silicon Based Nd-Doped Bismuth Titanate

Effect of Mg Doping on Ferroelectric Pst Thin Films for High Tunable Devices

Dielectric properties of BaTiO3 and Ba0.95Ca0.05TiO3 sintered in a reducing atmosphere

Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping

Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Advancing energy storage and supercapacitor applications through the development of Li+-doped MgTiO3 perovskite nano-ceramics

Study of the Defect Chemistry of Ca-Doped Batio3 Ceramics

Doping effects of metal cation on sulfide solid electrolyte/lithium metal interface

Investigation of Coherent Interface on Relaxation Behavior and Reliability of Mg-doped BaTiO3 Dielectric Ceramics: Experiments and First-Principle Calculations

Defect Dipole Engineering Enhanced the Dielectric Performance and Reliability of Mn-doped BaTiO3-based Multilayer Ceramic Capacitor

Effects of Alkaline Earth Doping on the Thermoelectric Properties of Misfit Layer Sulfides

Investigation of coherent interface on relaxation behavior and reliability of Mg-doped BaTiO 3 dielectric ceramics: Experiments and first-principle calculations

Study of Two Inorganic Particles in PMMA Electrochromic Devices Based on the Difference of Work Function