Abstract:High pressure enables the reconfiguration of band‐edge states for charge carriers, transforming the bound excitonic states of band‐edge carriers into free electron states. This process enhances the mobility of charge carriers and strengthens the electron‐phonon interaction. Consequently, it facilitates the energy transfer of charge carriers from narrowband emission to broadband emission in photoluminescence emission. Broadband emission in hybrid lead halide perovskites (LHPs) has gained significant attention due to its potential applications in optoelectronic devices. The origin of this broadband emission is primarily attributed to the interactions between electrons and phonons. Most investigations have focused on the impact of structural characteristics of LHPs on broadband emission, while neglecting the role of electronic mobility. In this work, the study investigates the electronic origins of broadband emission in a family of 2D LHPs. Through spectroscopic experiments and density functional theory calculations, the study unveils that the electronic states of the organic ligands with conjugate effect in LHPs can extend to the band edges. These band‐edge carriers are no longer localized only within the inorganic layers, leading to electronic coupling with molecular states in the barrier and giving rise to additional interactions with phonon modes, thereby resulting in broadband emission. The high‐pressure photoluminescence measurements and theoretical calculations reveal that hydrostatic pressure can induce the reconfiguration of band‐edge states of charge carriers, leading to different types of band alignment and achieving macroscopic control of carrier dynamics. The findings can provide valuable guidance for targeted synthesis of LHPs with broadband emission and corresponding design of state‐of‐the‐art optoelectronic devices.

Band-Gap Narrowing and Electric Transport Regulation of Hybrid Perovskites via Pressure Engineering

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Pressure‐Induced Bandgap Optimization in Lead‐Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

High-Pressure Band-Gap Engineering in Lead-Free Cs2 AgBiBr6 Double Perovskite

High‐Pressure Band‐Gap Engineering in Lead‐Free Cs2AgBiBr6 Double Perovskite

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Two Regimes of Bandgap Red Shift and Partial Ambient Retention in Pressure-Treated Two-Dimensional Perovskites

Bandgap Widening by Pressure-Induced Disorder in Two-Dimensional Lead Halide Perovskite

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Retainable Bandgap Narrowing and Enhanced Photoluminescence in Mn‐Doped and Undoped Cs2NaBiCl6 Double Perovskites by Pressure Engineering

Unified picture for the pressure-controlled band gap in inorganic halide perovskites: Role of strain-phonon and phonon-phonon couplings

Broadband Emission Induced by Band‐Edge Carrier Reconfiguration in 2D Hybrid Lead Halide Perovskites

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Gate-Induced Insulator to Band-Like Transport Transition in Organolead Halide Perovskite.

Reconfiguring Band-Edge States and Charge Distribution of Organic Semiconductor–incorporated 2D Perovskites Via Pressure Gating

Mechanism of Pressure-Driven Band Gap Evolutions in Lead-Free Halide Double Perovskites

Manipulating efficient light emission in two-dimensional perovskite crystals by pressure-induced anisotropic deformation.

Pressure induced band structure evolution of halide perovskites: a first-principles atomic and electronic structure study

Hybrid-DFT study of halide perovskites, an energy-efficient material undercompressive pressure for piezoelectric applications.