Thermal properties of charge noise sources

Martin V. Gustafsson,Arsalan Pourkabirian,Göran Johansson,John Clarke,Per Delsing
DOI: https://doi.org/10.1103/physrevb.88.245410
IF: 3.7
2013-12-10
Physical Review B
Abstract:Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.
physics, condensed matter, applied,materials science, multidisciplinary
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