Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes

Shihao Ding,Zhenghui Wu,Xiangwei Qu,Haodong Tang,Kai Wang,Bing Xu,Xiao Wei Sun
DOI: https://doi.org/10.1063/5.0019140
IF: 4
2020-08-31
Applied Physics Letters
Abstract:The phenomenon of positive aging has been frequently reported in quantum dot light-emitting diodes (QLEDs). However, the root cause for this phenomenon remains illusive. On the other hand, the commonly used electron transport material in QLEDs, ZnMgO, has been extensively studied as a resistive switching material. In this work, we found that the ZnMgO nano-particle film used in QLEDs showed a clear resistive switching effect. It is, thus, reasonable to relate the resistive switching mechanism of ZnMgO to the aging characteristics of QLED devices. We found that during the first stage of QLED aging, the efficiency of the QLED was improved due to the migration of off-lattice ions and formation of conductive filaments in the ZnMgO layer. Subsequently, as active oxygen ions migrated to the interface between quantum dots and ZnMgO, the barrier for electron transport increased due to the oxidation of quantum dots. At the same time, the conductive filaments were gradually fused due to the continuous external electric field. As a result, the performance of QLED devices continuously deteriorated.
physics, applied
What problem does this paper attempt to address?
The paper primarily explores how the resistive switching effect in the ZnMgO electron transport layer affects the aging characteristics of quantum dot light-emitting diodes (QLEDs). The study found that the ZnMgO layer can significantly produce a positive aging effect even without contact with the aluminum electrode. Through experiments, it was observed that in the initial stage, the efficiency of QLEDs is enhanced due to the migration of oxygen ions from the lattice and the formation of conductive filaments in the ZnMgO layer. However, as the active oxygen ions migrate to the interface between the quantum dots and the ZnMgO layer, this leads to the oxidation of the quantum dots, increasing the electron transport barrier, and the conductive filaments gradually break down, ultimately causing a continuous decline in QLED performance. Specifically, researchers fabricated QLED devices with different structures to verify the impact of the ZnMgO layer on the positive aging effect and revealed the physical processes occurring in the ZnMgO layer through the study of resistive switching memory effects. These results help to deepen the understanding of the physical mechanisms behind the aging characteristics of QLEDs and provide important insights for improving the performance and stability of QLEDs.