Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Wedge-Shaped HfO 2 Buffer Layer-Induced Field-Free Spin-Orbit Torque Switching of the HfO 2 /Pt/Co Structure

Voltage-gated field-free spin–orbit torque switching in Pt/Co/Ir/MgO wedged structures

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Field-free spin–orbit torque switching in L 1 0 -FePt single layer with tilted anisotropy

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures

Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys

Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Field-free spin–orbit torque-induced switching of perpendicular magnetization at room temperature in WTe2/ferromagnet heterostructures