Enhancing the electric charge output in LiNbO 3 -based piezoelectric pressure sensors

Wenhao Xu,Wenping Geng,Huiyi Zhang,Wenxiao Fu,Zihan Wang,Jiahe Li,Xiaojun Qiao,Yichi Zhang,Xiujian Chou

DOI: https://doi.org/10.1039/d3ra07712h

IF: 4.036

2024-01-01

RSC Advances

Abstract:LiNbO 3 is used to prepare a piezoelectric pressure sensor and its sensitivity is significantly improved via heterogeneous integration.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Qing Yang,Xin Guo,Wenhui Wang,Yan Zhang,Sheng Xu,Der Hsien Lien,Zhong Lin Wang

DOI: https://doi.org/10.1021/nn1022878

IF: 17.1

2010-01-01

ACS Nano

Abstract:We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier height at the contact by the produced local piezopotential. After a systematic study on the Schottky barrier height change with tuning of the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical, and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than 5-fold for pW levels of light detection.
Single-crystalline LiNbO3 Film Based Piezoelectric Sensors for Ultra-precision Pressure-sensing Applications

Junwei Gu,Xingli He,Shuyue Jin,Yunjing Zhang,Lingfeng Li,Linghui Kong,Peng Li

DOI: https://doi.org/10.1109/jsen.2024.3384502

IF: 4.3

2024-01-01

IEEE Sensors Journal

Abstract:This work presents the fabrication and characterization of a sub-GHz plate-wave-based pressure sensor relying on an ultra-thin (360 nm) single-crystalline LiNbO 3 film. The proposed devices exhibit multiple resonant modes which are characterized and analyzed by a precise 3D plate wave resonator model based on finite element analysis (FEA). Generally, the main resonant modes correspond to the Shear-horizontal ( SH ) and anti-symmetric ( A ) Lamb waves. To overcome the high-temperature coefficient of LiNbO 3 thin film, a thick layer (~4 μm) of SiO 2 was used to compensate for the temperature drift of the devices; the calculated temperature coefficients of frequency ( TCFs ) for the multi-resonant modes are lower than -27 ppm/K. The frequency and return loss (S 11 ) shift of the plate wave devices, the pressure sensitivity, and the pressure coefficient of frequency ( PCF ) were experimentally evaluated and analyzed. All the resonant modes show high PCF even with relatively lower operating frequencies (< 1 GHz). Especially it has been observed that the first-order anti-symmetric (A1) Lamb wave is ultra-susceptible to pressure changes, which presented a record high value of ~600 ppm/Bar and excellent linearity over the tested 0.6 to 1.8 Bar pressure range. The results show that the developed sensor has sufficiently high sensitivity and can be used for precise absolute pressure sensing.
Piezo-phototronic Effect Enhanced Pressure Sensor Based on ZnO/NiO Core/shell Nanorods Array

Bing Yin,Heqiu Zhang,Yu Qiu,Yue Chang,Jixue Lei,Dechao Yang,Yingmin Luo,Yu Zhao,Lizhong Hu

DOI: https://doi.org/10.1016/j.nanoen.2016.01.007

IF: 17.6

2016-01-01

Nano Energy

Abstract:Piezotronic pressure sensors have drawn a lot of attention since the piezotronic theory was established. In this work, a piezotronic pressure sensor based on ZnO/NiO core/shell nanorods array is fabricated by a simple and low-cost method. From the I–V characteristics, we can know that a reliable barrier layer is formed at the ZnO/NiO interface. When the ZnO/NiO nanorods are compressed by the pressure, the piezopotential in ZnO changes the NiO barrier height and then modulate the carrier distribution and transportation. Furthermore, the piezo-phototronic effect is a three-way coupling effect of semiconductor, piezoelectric-polarization and photon-excitation properties, which may be a feasible approach to enhance the performance of pressure sensors by tuning the generation, separation and recombination of photo-generated electron–hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, the performance of the pressure sensors is optimized and significantly enhanced by coupling of the piezoelectric effect and photo-excitation of ZnO nanorods. Under a UV (365nm) illumination, the enhancement in switch ratio and sensitivity of the pressure sensor is about 353% and 445%, respectively. The enhancement is attributed to weakening the influence of bulk resistance. Thus, ZnO/NiO interface plays a crucial role in determining the electrical transport property. Particularly, the created electrons by photons moved towards and accumulated at the interface, which results that more electrons can tunnel through the barrier layer than that without UV illumination under loading. These results indicate the capability of the piezo-phototronic effect to effectively enhance/optimize the performances of pressure sensors.
Piezo-Phototronic Effect Improved Performance of N-Zno Nano-Arrays/P-Cu2o Film Based Pressure Sensor Synthesized on Flexible Cu Foil

Jingchang Sun,Xiwen Zhang,Yueyi Lang,Jiming Bian,Ruixue Gao,Peida Li,Yuxin Wang,Chengren Li

DOI: https://doi.org/10.1016/j.nanoen.2016.12.028

IF: 17.6

2017-01-01

Nano Energy

Abstract:The piezo-phototronic effect has drawn great interest recently due to its improvement of optoelectronic devices performance by effectively controlling the carrier generation, separation, transport, and/or recombination at the interface/junction of the p–n junction. In this study, a compact sensitivity controllable pressure sensor with the n-ZnO nano-arrays/p-Cu2O film structure is synthesized on flexible Cu foil substrate, and the improved performance due to piezo-phototronic effect is characterized systematically. The heterostructure shows a nearly ideal rectifying behavior with substantial forward current of more than 1mA (at 3V) under pressure free and dark conditions, indicating excellent p-n junction was formed at the n-ZnO nano-arrays/p-Cu2O film interface. The linear dependence of switch ratio (SR) (I/I0) on the applied pressure and response time of ~1s were observed in the pressure sensor. The linear dependence can be further improved and a value up to 376% is reached by the illumination radiation of the 405nm violet light emitting diodes (LEDs), which had been tactfully embedded within the device. The advantages of embedding LEDs in the sensor lie in reducing of device volume as well as preventing influence of environment light on the sensor performance. Furthermore, a substantial enhancement in the sensitivity (I-I0/I0/∆P) of the pressure sensor is achieved by adjusting the illumination intensity, which reaches 918% at the illumination intensity of 11.7mW/cm2. The piezo-phototronic effect enhanced performance can be well elucidated by the corresponding energy band diagram. Our achievement provides a very promising method to improve the SR and sensitivity controllability of pressure sensor using piezo-phototronic effect.
Engineering Grain Orientation and Local Heterogeneous Enable Further Breakthroughs in Piezoelectricity for NaNbO3-based Piezoelectric Oxides

Jinfeng Lin,Yingbo Cao,Jin Qian,Guohui Li,Kun Zhu,Lihui Xu,Chukai Chen,Guanglong Ge,Cheng Shi,Yongqi Wei,Bo Shen,Jiwei Zhai

DOI: https://doi.org/10.1016/j.actamat.2023.119545

IF: 9.4

2023-01-01

Acta Materialia

Abstract:Eco-friendly NaNbO3 (NN)-based relaxor ferroelectric ceramics with high dielectric constants cannot meet the high piezoelectric activity quality factors (FOMs: d33 × g33) requirements of electromechanically coupled devices. To solve this issue, we successfully improved the piezoelectricity of NN-based relaxor piezoceramics while reducing the dielectric constant based on microstructural tuning by virtue of the chemical design and texturing engineering. Mainly affected by the highly <001>c orientation and relaxor MPB, the obtained novel 88.5NaNbO3–10Ba(Ti0.7Sn0.3)O3–1.5NaSbO3 texture ceramics enjoys an ultrahigh piezoelectric coefficient (d33 = 423 pC/N), reaching a record high in NaNbO3-based lead-free ceramics. Meanwhile, a large FOMs value (d33 × g33 = 13.3·10−12 m2/N) is successfully realized due to the suppression of the dielectric constant. More importantly, the stable phase/domain evolution also encourages excellent temperature stability for piezoelectricity and FOMs. Especially for the piezoelectricity, when the annealing temperature is < 140 °C, the d33 of the 1.5T ceramics can be stabilized ∼ 400 pC/N. Such excellent electrical temperature stability shows more competition in the reported NN-based piezoceramics. This work not only provides a design paradigm for high-performance piezoelectric materials, but also facilitates their development in electromechanical coupling devices.
Mechanism of Significantly Enhanced Piezoelectric Performance and Stability in Textured Potassium-Sodium Niobate Piezoelectric Ceramics

Peng Li,Baihui Liu,Bo Shen,Jiwei Zhai,Yang Zhang,Feng Li,Xing Liu

DOI: https://doi.org/10.1016/j.jeurceramsoc.2017.07.017

IF: 5.7

2017-01-01

Journal of the European Ceramic Society

Abstract:In this study, the piezoelectric coefficient d33 and planar electromechanical coupling coefficient kp were enhanced 145% and 71%, respectively for the <001>-textured (K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3 piezoelectric ceramics compared with their randomly oriented counterpart. Significantly enhanced piezoelectric response in textured ceramics is originated from a combined effect of the intrinsic high piezoelectric activity of <001>-oriented grains in the tetragonal-orthorhombic phases, and easy polarization rotation of fine domains. Furthermore, a comparative analysis suggests that <001>-textured ceramics exhibit good thermal stability, benefiting from the weakened depolarization behavior via crystal orientation. The superior fatigue resistance in textured ceramics can be attributed to the reduced clamping effect as low defect density. These results show that high-performance textured ceramics reported in this work will be promising candidates in the field of lead-free piezoelectric materials.
Improved piezoelectric properties of (K xNa 1- x) 0.94Li 0.06NbO 3 lead-free ceramics fabricated by combining two-step sintering

Jigong Hao,Wangfeng Bai,Bo Shen,Jiwei Zhai

DOI: https://doi.org/10.1016/j.jallcom.2012.04.033

IF: 6.2

2012-01-01

Journal of Alloys and Compounds

Abstract:The effects of K/Na ratio on the phase structure, microstructure and electrical properties of (K xNa 1-x) 0.94Li 0.06NbO 3 (K xNLN, x = 0.34-0.61) lead-free piezoelectric ceramics were studied. Results showed that samples with x = 0.46-0.52 have a coexisted crystal structure with both orthorhombic and tetragonal phases, separating orthorhombic phase on both sides of this composition and corresponding to a polymorphic phase transition near room temperature. In this region, enhanced electrical properties were obtained. The approach of two-step sintering obviously broadened the sintering temperature range of the ceramics and further improved piezoelectric properties by ∼10%, indicating it is a promising way for fabricating (K, Na)NbO 3-based ceramics. Moreover, all studied samples showed good resistance to thermal depoling up to temperatures close to their Curie points, suggesting that this system should be an attractive lead-free material for piezoelectric applications. © 2012 Elsevier B.V. All rights reserved.
Design and simulation of an aluminum nitride piezoelectric resonant pressure sensor

Peng Li,Yin Luo,Liangliang Guo,Yuming Zhang

DOI: https://doi.org/10.1063/5.0088626

IF: 1.697

2022-06-24

AIP Advances

Abstract:AIP Advances, Volume 12, Issue 6, June 2022. In this paper, a novel aluminum nitride (AlN) resonant pressure sensor with piezoelectric-excitation and piezoelectric-detection is presented. The key structure of this resonator is an AlN flexible beam. Parallel electrodes are designed on the beam to excite the resonance structure in-plane. All layers of this AlN resonant structure are grown on a silicon-on-insulator (SOI) wafer by the deposition process. Anchor islands are fabricated in the top silicon layer of the SOI. The structure is designed and optimized by finite element simulation software, and the performance of this pressure sensor is simulated. The resonance frequency is 60.04 kHz, and the sensitivity is 13.6 Hz/kPa under a pressure range of 0–120 kPa. This AlN sensor is advantageous in that its structure and fabrication processes are simple, and it is a new choice for resonant pressure sensors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Enhanced Piezoelectricity in (K, Na)NbO3-based Ceramics by Optimizing Composition and Texture Process

Baihui Liu,Peng Li,Yang Zhang,Bo Shen,Jiwei Zhai

DOI: https://doi.org/10.1016/j.jallcom.2016.11.069

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:In this study, <00l>-textured (1-x)(K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3-xBaZrO3 [abbreviated as (1-x)KNLNS-xBZ, x = 0.01, 0.02, 0.04, 0.06, 0.08] lead-free ceramics are prepared by template grain growth (TGG) method using NaNbO3 templates. The effects of BZ content on the phase structure, microstructure, as well as electrical properties of ceramics are investigated. Large piezoelectric constant d33 (∼234 pC/N) and planar electromechanical coupling factor kp (∼38.42%) are obtained in the ceramics with x = 0.02, and high field-induced strain (d33∗ ∼ 403.5 pm/V) is also achieved in the rhombohedral-orthorhombic-tetragonal phase coexistent area due to multiphase coexistence. These results show that the introduction of BaZrO3 is a very effective way to improve the electrical properties of textured (K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3 lead-free piezoelectric ceramics.
Near stoichiometric lithium niobate crystal with dramatically enhanced piezoelectric performance for high temperature acceleration sensing

Guoliang Wang,Fulei Wang,Xi Gao,Dongzhou Wang,Wei Song,Yanlu Li,Xueliang Liu,Yuanhua Sang,Fapeng Yu,Xian Zhao

DOI: https://doi.org/10.1039/d4tc02466d

IF: 6.4

2024-09-04

Journal of Materials Chemistry C

Abstract:Lithium niobate (LN) is a multifunctional crystal with excellent piezoelectric properties, making it a potential candidate for piezoelectric sensing applications. In this study, the mechanism of the discrepancies of piezoelectric properties between near stoichiometric lithium niobate (NSLN) and congruent lithium niobate (CLN) were probed using Raman spectrum, first principle calculations and single crystal X-ray diffraction (XRD), where the 〖V Li -〗 defect demonstrated a significant impact on the distortion of the NbO6 octahedron, which in turn affected the piezoelectric properties of the LN crystal. Among them, NSLN crystal was found to exhibit strong piezoelectric performance. It was confirmed that the NSLN crystal exhibited strong piezoelectric coefficients d15 and d22 on the orders of 77.6 pC N-1 and 22.8 pC N-1, respectively, showing improvements of 17.4% and 18.1% over the CLN crystal, highlighting its enhanced piezoelectric characteristics. Finally, temperature dependent behaviours of the electro-elastic constants for the NSLN and CLN crystals were discussed. And the high temperature piezoelectric performance of NSLN crystal was evaluated utilizing a prototype of shear-mode acceleration sensor, demonstrating remarkable sensing performance up to 650 °C with good temperature stability (sensitivity variation <5%).

materials science, multidisciplinary,physics, applied
Enhanced Piezoelectric Performance and Thermal Stability of Alkali Niobate-Based Ceramics

Weiwei Yang,Peng Li,Feng Li,Xing Liu,Bo Shen,Jiwei Zhai

DOI: https://doi.org/10.1016/j.ceramint.2018.10.141

IF: 5.532

2019-01-01

Ceramics International

Abstract:In this study, 0.5 wt% MnO2 doped (0.99-x)(K0.5Na0.5)(Nb0.965Sb0.035)O-3-0.01CaZrO(3)-x(Bi0.5K0.5)(Hf0.98Ti0.02) O-3 [abbreviated as (0.99-x)KNNS-0.01CZ-xBKHT, x = 0.01, 0.02, 0.03, 0.04, 0.05, 0.06] lead-free piezoelectric ceramics were fabricated by traditional solid-state reaction method. The microstructure, phase transformation, electromechanical properties and the thermal stability of the ceramics were systematically studied. Resulting from the R-T phase coexisting, a large piezoelectric coefficient (d(33) similar to 425 pC/N), planar electromechanical coupling factor (k(p) similar to 49%) were achieved in the ceramics with x = 0.04. Furthermore, the specimens with x = 0.04 also exhibit excellent temperature stability for d(33) which was manifested by the less than 10% variation of d(33) values when the annealing temperature increase from 25 degrees C to 100 degrees C. The good comprehensive properties indicate that MnO2 doped (0.99-x)KNNS-0.01CZ-xBKHT ceramics are promising candidates for practical application to eliminate the Pb-based piezoelectric ceramics from the market.
Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

Lin Wang,Jie Wu,Minghui Shang,Fengmei Gao,Xiaoxiao Li,Yapeng Zheng,Dongdong Zhang,Weiyou Yang,Shanliang Chen

DOI: https://doi.org/10.1007/s10853-021-06411-1

IF: 4.5

2021-08-09

Journal of Materials Science

Abstract:The vital issue for semiconductor pressure sensors is how to improve the sensitivity of their piezoresistive behavior. In this work, aiming to substantially promote the sensitivity, ZnO/SiC nanowire heterojunctions with various ZnO piezoelectric shell thicknesses were constructed by adjusting the depositing times of atomic layer deposition (ALD). It was found that the thicknesses of coupled ZnO nanolayers played a profound effect on the response of the heterojunctions to the change of stresses, representing the tailored piezoresistive behaviors. Accordingly, the piezoresistive coefficient was optimized to ~ 9.47 × 10–11 Pa−1 with an enhanced ΔR/R0 value of ~ 0.88, once the ZnO nanolayer thickness is fixed at ~ 20 nm, superior to most of pressures sensors based on SiC nanomaterials. This work may provide a novel strategy for exploring advanced SiC-based pressure sensors by coupling with suitable thickness of the piezoelectric nanolayer to improve piezoresistive behaviors.Graphical abstractThe tailored piezoresistive performance of ZnO/SiC nanowire heterojunctions with a adjusted shell thicknesses of ZnO piezoelectric nanolayers was reported, which had an enhanced piezoresistive coefficient of 9.47 × 10–11 Pa−1 and a ΔR/R0 of 0.88.

materials science, multidisciplinary
Improving Piezoelectric Properties of Pb(Ni, Nb)O3-Pb(Hf, Ti)O3 Ceramics by LiF Addition

Yangxi Yan,Zhihong Liu,Zhimin Li,Maolin Zhang,Dongyan Zhang,Yujun Feng

DOI: https://doi.org/10.1016/j.ceramint.2017.12.094

IF: 5.532

2018-01-01

Ceramics International

Abstract:0.49Pb(Ni1/3Nb2/3)O3-0.51Pb(Hf0.3Ti0.7)O3 (PNN-PHT) piezoelectric ceramics added with LiF were prepared, and the effect of the LiF addition on their piezoelectric properties was investigated. Results showed that LiF promoted the formation of pure perovskite phase and the densification of the PNN-PHT ceramics. The better piezoelectric properties, i.e. d33 = 957 pC/N and εr = 7113, were obtained for the 4at% LiF added sample which was prepared at a sintering temperature as low as 1100°C. The mechanism of the improved properties by LiF addition was discussed. Results suggest the PNN-PHT ceramic to be an excellent candidate for lead-based piezoelectric materials applied in large displacement actuator.
(K, Na)NbO3-based Lead-Free Piezoceramics: One More Step to Boost Applications.

Huan Liu,Yi-Xuan Liu,Aizhen Song,Qian Li,Yang Yin,Fang-Zhou Yao,Ke Wang,Wen Gong,Bo-Ping Zhang,Jing-Feng Li

DOI: https://doi.org/10.1093/nsr/nwac101

IF: 20.6

2022-01-01

National Science Review

Abstract:Piezoelectric materials,as a conver-sion medium between mechanical and electrical energies,are widely used in actuators,sensors and sonar systems.
High-Performance Piezoelectric-Type MEMS Vibration Sensor Based on LiNbO3 Single-Crystal Cantilever Beams

Huifen Wei,Wenping Geng,Kaixi Bi,Tao Li,Xiangmeng Li,Xiaojun Qiao,Yikun Shi,Huiyi Zhang,Caiqin Zhao,Gang Xue,Xiujian Chou

DOI: https://doi.org/10.3390/mi13020329

IF: 3.4

2022-02-19

Micromachines

Abstract:It is a great challenge to detect in-situ high-frequency vibration signals for extreme environment applications. A highly sensitive and robust vibration sensor is desired. Among the many piezoelectric materials, single-crystal lithium niobate (LiNbO3) could be a good candidate to meet the demand. In this work, a novel type of micro-electro-mechanical system (MEMS) vibration sensor based on a single crystalline LiNbO3 thin film is demonstrated. Firstly, the four-cantilever-beam MEMS vibration sensor was designed and optimized with the parametric method. The structural dependence on the intrinsic frequency and maximum stress was obtained. Then, the vibration sensor was fabricated using standard MEMS processes. The practical intrinsic frequency of the as-presented vibration sensor was 5.175 kHz, which was close to the calculated and simulated frequency. The dynamic performance of the vibration sensor was tested on a vibration platform after the packaging of the printed circuit board. The effect of acceleration was investigated, and it was observed that the output charge was proportional to the amplitude of the acceleration. As the loading acceleration amplitude is 10 g and the frequency is in the range of 20 to 2400 Hz, the output charge amplitude basically remains stable for the frequency range from 100 Hz to 1400 Hz, but there is a dramatic decrease around 1400 to 2200 Hz, and then it increases significantly. This should be attributed to the significant variation of the damping coefficient near 1800 Hz. Meanwhile, the effect of the temperature on the output was studied. The results show the nearly linear dependence of the output charge on the temperature. The presented MEMS vibration sensors were endowed with a high output performance, linear dependence and stable sensitivity, and could find potential applications for the detection of wide-band high-frequency vibration.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Enhanced Piezoelectric Properties and Thermal Stability of LiNbO3-modified PNN–PZT Ceramics

Wei Peng,Jianglei Chang,Jianwei Zhao,Dawei Wang,Zhen Liu,Genshui Wang,Shuxiang Dong

DOI: https://doi.org/10.1016/j.jmat.2023.10.013

IF: 8.589

2024-01-01

Journal of Materiomics

Abstract:Piezoelectric PZT ceramics with high piezoelectric properties and good thermal stability are urgently desired concerning the practical application. New compositions of LiNbO3 modified Pb(Ni1/3Nb2/3) O-3-PbZrO3-PbTiO3 ceramics have been prepared in this study. The effects of the introduction of the LiNbO3 on the system were comprehensively investigated in terms of the phase structure, microstructure, electric properties, and thermal stability behavior of the ceramics. All compositions are located in the morphotropic phase boundary (MPB) region, and the ratio of the rhombohedral (R) phase increases obviously with the increase of LiNbO3 concentration. With increasing the LiNbO3 content, the piezoelectric properties were significantly enhanced. The sample added with 2% (in mole) LiNbO3 shows excellent electric properties, including T-m = 185 degrees C, epsilon(r) = 5,643, k(p) = 0.626, Q(m) = 51, d(33) = 902 pC/N. More importantly, no thermal depolarization behavior was observed in the temperature range of 25-100 degrees C. For PNN-PZT-x%LN ceramics, which is mainly attributed to the pinning effect resulted by the (Li-Pb' - Nb-Zr/Ti(center dot)) defect dipoles. (c) 2023 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society.
Facile Fabrication of a Flexible LiNbO3 Piezoelectric Sensor Through Hot Pressing for Biomechanical Monitoring

Muzhen Xu,Hua Kang,Li Guan,Huayi Li,Meining Zhang

DOI: https://doi.org/10.1021/acsami.7b10411

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Wearable pressure sensors have attracted increasing attention for biomechanical monitoring due to their portability and flexibility. Although great advances have been made, there are no facile methods to produce sensors with good performance. Here, we present a simple method for manufacturing flexible and self-powered piezoelectric sensors based on LiNbO3 (LN) particles. The LN particles are dispersed in polypropylene (PP) doped with multiwalled carbon nanotubes (MWCNTs) by hot pressing (200 °C) to form a flexible LN/MWCNT/PP piezoelectric composite film (PCF) sensor. This cost-effective sensor has high sensitivity (8 Pa), fast response time (ca. 40 ms), and long-term stability (>3000 cycles). Measurements of pressure changes from peripheral arteries demonstrate the applicability of the LN/MWCNT/PP PCF sensor to biomechanical monitoring as well as its potential for biomechanics-related clinical diagnosis and forecasting.
Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors

jinghui bi,guodong wei,minghui shang,fengmei gao,bin tang,weiyou yang

DOI: https://doi.org/10.1039/c4tc01810a

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:To achieve precision instrumentation and accurate measurement, there is increasing need for pressure sensors to be well serviced in harsh environments. We report, for the first time, piezoresistance in single-crystalline Si3N4 nanobelts by conductive atomic force microscopy (C-AFM). The transverse electromechanical properties of the Si3N4 nanobelt were investigated under various loading forces applied by the C-AFM tip. The calculated transverse piezoresistance coefficient pi([1 (2) over bar0]) of the nanobelt was in the range of 2.2 to 8.8 x 10 (11) Pa-1 under the applied loading forces ranging from 25.6 to 135.3 nN. The relationship between the piezoresistance coefficients and the applied forces was almost linear. Significant and linear decreases in nanobelt resistance with increasing loading forces were observed, which exhibited a variation of similar to 3 M Omega with a changed force of 1 nN, implying that the pressure sensors have high sensitivity. Stable and repeatable I-V curves through multiple voltage sweepings were accomplished, suggesting that the Si3N4 nanobelts pressure sensors are quite reliable.
Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Jie Wu,Fengmei Gao,Gang Shao,Zhentao Du,Weiyou Yang,Lin Wang,Zhenxia Wang,Shanliang Chen

DOI: https://doi.org/10.1021/acsami.0c04111

2020-05-13

Abstract:Improving the sensitivity of the piezoresistive behavior of semiconductor nanostructures is critically important because it is one of the keys to explore advanced pressure sensors with desired sensitivity. Herein, we reported a strategy for improving the piezoresistive behavior of SiC nanowire by coupling with the piezoelectric effect of ZnO nanolayers, which were grown by an atomic layer deposition approach. As a result, the detected current of the as-constructed ZnO/SiC heterojunction nanowires is 6 times more than SiC nanowires, suggesting its substantially improved sensitivity. Moreover, the measured ΔR/R0 value and gauge factor (GF) of the ZnO/SiC heterojunction nanowires could be up to 0.82 and 50.93, respectively, which was profoundly higher than those of the SiC counterpart and most of reported positive piezoresistive SiC sensors.
High-performance Sb-doped P-Zno NW Films for Self-Powered Piezoelectric Strain Sensors

Zhihao Huo,Xiandi Wang,Yufei Zhang,Bensong Wan,Wenqiang Wu,Jianguo Xi,Zheng Yang,Guofeng Hu,Xiangyu Li,Caofeng Pan

DOI: https://doi.org/10.1016/j.nanoen.2020.104744

IF: 17.6

2020-01-01

Nano Energy

Abstract:Novel wide-bandgap piezoelectric semiconductor materials, with wurtzite structure, set a great impetus to research, which outreach the promising applications in optoelectronic devices, wearable electronic devices and medical monitoring systems. Here, we studied the piezotronic effect of p-ZnO NW films under strain which were suitable for self-powered tactile sensors. Typically, the doping level was 2 x 10(17) cm(-3) at the 2% Sb doping in solution. Based on different devices design, it was verified that the piezoelectric charges induced by applied strain could significantly affect the charge carrier separation and transport at the interface/junction. For p-ZnO NW thin film devices, the negative piezoelectric charge reduces Schottky barrier height, while the positive piezoelectric charge increases it. Self-powered strain sensors were then developed based on the changes of piezoelectric potential under different strain, which have a potential candidate for applications in man-machine interaction interface and biomedical sciences.

Enhancing the electric charge output in LiNbO 3 -based piezoelectric pressure sensors

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Single-crystalline LiNbO3 Film Based Piezoelectric Sensors for Ultra-precision Pressure-sensing Applications

Piezo-phototronic Effect Enhanced Pressure Sensor Based on ZnO/NiO Core/shell Nanorods Array

Piezo-Phototronic Effect Improved Performance of N-Zno Nano-Arrays/P-Cu2o Film Based Pressure Sensor Synthesized on Flexible Cu Foil

Engineering Grain Orientation and Local Heterogeneous Enable Further Breakthroughs in Piezoelectricity for NaNbO3-based Piezoelectric Oxides

Mechanism of Significantly Enhanced Piezoelectric Performance and Stability in Textured Potassium-Sodium Niobate Piezoelectric Ceramics

Improved piezoelectric properties of (K xNa 1- x) 0.94Li 0.06NbO 3 lead-free ceramics fabricated by combining two-step sintering

Design and simulation of an aluminum nitride piezoelectric resonant pressure sensor

Enhanced Piezoelectricity in (K, Na)NbO3-based Ceramics by Optimizing Composition and Texture Process

Near stoichiometric lithium niobate crystal with dramatically enhanced piezoelectric performance for high temperature acceleration sensing

Enhanced Piezoelectric Performance and Thermal Stability of Alkali Niobate-Based Ceramics

Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

Improving Piezoelectric Properties of Pb(Ni, Nb)O3-Pb(Hf, Ti)O3 Ceramics by LiF Addition

(K, Na)NbO3-based Lead-Free Piezoceramics: One More Step to Boost Applications.

High-Performance Piezoelectric-Type MEMS Vibration Sensor Based on LiNbO3 Single-Crystal Cantilever Beams

Enhanced Piezoelectric Properties and Thermal Stability of LiNbO3-modified PNN–PZT Ceramics

Facile Fabrication of a Flexible LiNbO3 Piezoelectric Sensor Through Hot Pressing for Biomechanical Monitoring

Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

High-performance Sb-doped P-Zno NW Films for Self-Powered Piezoelectric Strain Sensors