Anomalous phonon softening of G-band in compressed graphitic carbon nitride due to strong electrostatic repulsion

Zhenxing Yang,Javeed Mahmood,Shifeng Niu,Hui Tian,Tingting Ji,Cailong Liu,Jong-Beom Baek,Bertil Sundqvist,Mingguang Yao,Bingbing Liu
DOI: https://doi.org/10.1063/5.0038445
IF: 4
2021-01-11
Applied Physics Letters
Abstract:Graphitic carbon nitride (C<sub>2</sub>N and C<sub>3</sub>N) with various π electron distributions on layers have been studied under pressure through a combined theoretical and experimental approach and a comparison with graphite. It is found that as these materials transform into low compressibility phases in the pressure range from 15 to 45 GPa, strong electrostatic repulsion between π electrons and in-plane <i>sp</i><sup>2</sup> electrons may distort and soften the <i>sp</i><sup>2</sup> bonds, leading to anomalous pressure evolutions of the intralayer phonon vibrations, such as a plateau-like behavior of E<sub>2g</sub> mode (G-band) in C<sub>2</sub>N and C<sub>3</sub>N. This also causes a slow increase in the resistivity/resistance of C<sub>2</sub>N and C<sub>3</sub>N as pressure increases, and the gradual interlayer bonding leads to an abrupt increase in resistance of the materials but with different pressure responses due to their different π electron distributions. Moreover, the intensity enhancement of the G band in both CN materials may be related to their electronic structure changes. The results deepen our understanding of the effects of π electron distribution on the structural transition of graphitic materials and may explain some unexplained in previous studies.
physics, applied
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