Abstract:Abstract Background: Recording of electrical activity of neurons is indispensable for decoding the information in the brain. The amplitude of signals recorded by electrodes is small, and it must be amplified to the level that can be digitalized by the analog-to-digital convert (ADC). A micro-power low-noise neural recording amplifier is indispensable for implant hippocampal cognitive prosthesis. When the process turns into deep submicron, the gate leakage current of the metal oxide semiconductor (MOS) transistor becomes larger and mismatch between devices becomes worsen. It is necessary to keep the neural amplifier robust in all process corners. Methods: The proposed circuit is a two-stage amplifier which can achieve a good trade-off between power consumption and noise. Four second-stage amplifiers share a common reference amplifier to reduce area and power consumption. A pseudo-resistor with high resistance is utilized to realize a very-low frequency high pass corner without external components. In order to minimize process variation, a bulk-compensated (BC) technique is adopted to maintain adequate tolerance in all corner case. Results: The 4-channel neural amplifier is designed and fabricated in a 40 nm standard complementary metal oxide semiconductor (CMOS) process. It achieves a mid-band gain of 54 dB, a bandwidth of 70 Hz to 7.7 kHz, a total input-referred noise of 3.2 μVrms , and a Noise Efficiency Factor (NEF) of 3.3 while consuming 4.68 µW from the 1.1 V supply. The core area of one channel is only 0.032 mm 2 . Conclusion: A 4-channel integrated neural recording amplifier chip with bias-compensated circuits is presented in this paper. Extensive simulations insure that the design is “center”. The chip layout is verified using design rules check (DRC) and layout versus schematic (LVS) design check with the help of verification tools. Test results shows that it is less sensitive to process variation and consumes less power compared with amplifier without bulk-compensated circuit. This makes the design robust and uniquely appropriate for low-power implant application.

Analysing and Measuring the Performance ofMemristive Integrating Amplifiers

A Robust 4-channel Micro-power Low-noise Neural Recording Amplifier for Hippocampal Cognitive Prosthesis

Genetic Algorithm for Electro-Mechanical Co-Optimization of a MEMS Accelerometer Comprising a Mechanical Motion Pre-Amplifier with a 2Nd-Order Sigma Delta Modulator

Comprehensive Design Considerations and Noise Modeling of Preamplifier for MEMS Electrometry.

Real-Time State Modulation and Acquisition Circuit in Neuromorphic Memristive Systems

Neural signal analysis with memristor arrays towards high-efficiency brain–machine interfaces

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

An Integrated Amplifier With Passive Neutralization of Myoelectric Interference From Neural Recording Tripoles

A High Input Impedance Low Noise Integrated Front-End Amplifier for Neural Monitoring

Interfacing Biology and Electronics with Memristive Materials

Investigation and Manipulation of Different Analog Behaviors of Memristor As Electronic Synapse for Neuromorphic Applications

Integration of Physics-Derived Memristor Models with Machine Learning Frameworks

Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays

Investigation of Electrical Performance and Reliability of Memristors by Tuning Compliance Current During Electroforming Process

Full imitation of synaptic metaplasticity based on memristor devices.

Memristor networks for real-time neural activity analysis

Stochastic Memristive Interface for Neural Signal Processing

Noise Efficient Integrated Amplifier Designs for Biomedical Applications

Learning Task-Based Trainable Neuromorphic ADCs via Power-Aware Distillation

Memristor-based analogue computing for brain-inspired sound localization with in situ training