Abstract:Perovskite single-crystal (SC) or quasi-single-crystal (QSC) films are promising candidates for excellent performance of photoelectric devices. However, it is still a great challenge to fabricate large-area continuous SC or QSC films with proper thickness. Herein, we propose a pressure-assisted high-temperature solvent-engineer (PTS) strategy to grow large-area continuous MAPbI3 QSC films with uniformly thin thickness and orientation. Dramatic grain growth (∼100 μm in the lateral dimension) and adequate boundary fusion are realized in them, vastly eliminating the grain boundaries. Thus, remarkable diminution of the trap density (ntrap: 7.43 × 1011 cm–3) determines a long carrier lifetime (τ2: 1.7 μs) and superior photoelectric performance of MAPbI3-based lateral photodetectors; for instance, an ultrahigh on/off ratio (>2.4 × 106, 2 V), great stability, fast response (283/306 μs), and high detectivity (1.41 × 1013) are achieved. The combination properties and performance of the QSC films surpass most of the reported MAPbI3. This effective approach in growing perovskite QSC films points out a novel way for perovskite-based optoelectronic devices with superior performance.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08674?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08674</a>.Additional information and figures including the I(110)/I(310) peak ratio of the PTS-150 film and CA film; XRD patterns, XRD patterns from 12 to 15°, and rocking curves of CA, PTS-100, PTS-150, and PTS-200 films; cross-sectional SEM images of the PTS-100 film and PTS-200 film; AFM and three-dimensional topographic images of the individual grain on the PTS-150 film; three-dimensional topographic images of PTS-100, PTS-150, and PTS-200 films; XRD patterns of the precursor film (CA film) annealed at 150 °C in an air atmosphere (annealing time is 5 h) and PTS-150 film; optical image of the CA film after absorbing excessive IPA; SEM images of the PTS-150 film, applied pressures were 50 and 150 MPa in the PTS process; UV–vis absorption spectra of CA, PTS-100, PTS-150, and PTS-200 films; concentration and migration barriers of charge carriers in the PC film and QSC film in the dark; semilogarithmic I–V curves of PTS-100, PTS-150, and PTS-200 film photodetectors irradiated at 532 nm and 100 mW; I–T curves of PTS-100, PTS-150, and PTS-200 film photodetectors under different power intensities of a 532 nm laser; the Ilight/Idark ratio of the photodetectors based on PTS-100, PTS-150, and PTS-200 films under different excitation power intensities of a 532 nm laser; I–T curves and I–V curves of PTS-150 film photodetectors excited by a 532 nm laser with various powers at a bias voltage of 2 V; transient photocurrent (current–time curve) of the CA film photodetector; lifetime comparison of the PTS-150(A) MAPbI3 film with other reported MAPbI3 polycrystalline films (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08674/suppl_file/am0c08674_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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