Slow on, fast off

Hang Yu,Jenny Nelson

DOI: https://doi.org/10.1038/s41563-024-01885-1

IF: 41.2

2024-05-04

Nature Materials

Abstract:The slow turn-on speed in accumulation-mode organic electrochemical transistors is explained by asymmetric ion transport in switching kinetics.

materials science, multidisciplinary,physics, applied,chemistry, physical, condensed matter

What problem does this paper attempt to address?

Understanding Asymmetric Switching Times in Accumulation Mode Organic Electrochemical Transistors

Jiajie Guo,Shinya E. Chen,Rajiv Giridharagopal,Connor G. Bischak,Jonathan W. Onorato,Kangrong Yan,Ziqiu Shen,Chang-Zhi Li,Christine K. Luscombe,David S. Ginger

DOI: https://doi.org/10.1038/s41563-024-01875-3

IF: 41.2

2024-01-01

Nature Materials

Abstract:Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics and real-time sensing applications. Existing models of device operation cannot explain the experimental observations that turn-off times are generally much faster than turn-on times in accumulation mode organic electrochemical transistors. Here, using operando optical microscopy, we image the local doping level of the transistor channel and show that turn-on occurs in two stages—propagation of a doping front, followed by uniform doping—while turn-off occurs in one stage. We attribute the faster turn-off to a combination of engineering as well as physical and chemical factors including channel geometry, differences in doping and dedoping kinetics and the phenomena of carrier-density-dependent mobility. We show that ion transport limits the operation speed in our devices. Our study provides insights into the kinetics of organic electrochemical transistors and guidelines for engineering faster organic electrochemical transistors. The turn-off time is generally faster than the turn-on time in accumulation mode organic electrochemical transistors (OECTs), but the mechanism is less understood. Here the authors find different transient behaviours of turn-on and turn-off in accumulation mode OECTs, and ion transport is the limiting factor of device kinetics.
Why accumulation mode organic electrochemical transistors turn off much faster than they turn on

Jiajie Guo,Shinya E. Chen,Rajiv Giridharagopa,Connor G. Bischak,Jonathan W. Onorato,Kangrong Yan,Ziqiu Shen,Chang-Zhi Li,Christine K. Luscombe,David S. Ginger

2023-05-02

Abstract:Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors (OECTs) in neuromorphic computing and real-time sensing applications. Existing models of device operation cannot explain the experimental observations that turn-off times are generally much faster than turn-on times in accumulation mode OECTs. Through operando optical microscopy, we image the local doping level of the transistor channel and show that device turn-on occurs in two stages, while turn-off occurs in one stage. We attribute the faster turn-off to a combination of engineering as well as physical and chemical factors including channel geometry, differences in doping and dedoping kinetics, and the physical phenomena of carrier density-dependent mobility. We show that ion transport is limiting the device operation speed in our model devices. Our study provides insights into the kinetics of OECTs and guidelines for engineering faster OECTs.

Applied Physics,Materials Science
Effect of Intrachannel Ion Transport on Transient Characteristics of Nanochannels

Xingye Zhang,Xin Zhu,Zhen Cao,Chaoming Gu,Yang Liu

DOI: https://doi.org/10.1021/acs.jpcc.8b04714

2018-01-01

Abstract:This study numerically and theoretically investigates the transient responses of nanofluidic channels under step-like voltage biases. Time-dependent simulations based on Poisson-Nernst-Planck equations demonstrate that in the Ohmic regime of electrical conductance, the transient characteristics are distinctively different from those in the limiting regime. Whereas the latter has been previously shown to be due to the dynamics of ion depletion in the reservoirs, the present study shows that the former is mainly due to the propagation of ion accumulation inside the channels. Our further analysis derives expressions for the characteristic transient times in the Ohmic regime based on the ambipolar nature of the ion transport. The derived expressions are correlated with numerical simulations for examining the dependence of the characteristic transient times on important device parameters as well as the effect of electro-osmotic flow.
Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

Juan Bisquert,Nir Tessler

2024-10-09

Abstract:For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we describe a physical-electrochemical model of the transient response to a step of the gate voltage. The model incorporates (1) ion diffusion inside the channel that governs the electronic conductivity, (2) horizontal electron transport, and (3) the external elements (capacitance, ionic resistance) of the ion dynamics in the electrolyte. We find a general expression of two different time constants that determine the vertical insertion process in terms of the kinetic parameters, in addition to the electronic transit time. We highlight the central role of the chemical capacitance in determining the modulation of the lateral conductivity. The different types of response of the drain current are classified, and we discuss the significance for synaptic operation in neuromorphic circuits. The model is confirmed by detailed simulations that enable to visualize the different ions distributions and dynamics.

Applied Physics
Switching Response in Organic Electrochemical Transistors by Ionic Diffusion and Electronic Transport

Juan Bisquert,Baurzhan Ilyassov,Nir Tessler

DOI: https://doi.org/10.1002/advs.202404182

IF: 15.1

2024-07-27

Advanced Science

Abstract:An analytical model for the transient response of organic electrochemical transistors combines vertical ionic diffusion and horizontal electronic transport. A classification of transients and hysteresis effects is obtained, and the model is developed by experimental measurements and advanced simulations. The switching response in organic electrochemical transistors (OECT) is a basic effect in which a transient current occurs in response to a voltage perturbation. This phenomenon has an important impact on different aspects of the application of OECT, such as the equilibration times, the hysteresis dependence on scan rates, and the synaptic properties for neuromorphic applications. Here we establish a model that unites vertical ion diffusion and horizontal electronic transport for the analysis of the time‐dependent current response of OECTs. We use a combination of tools consisting of a physical analytical model; advanced 2D drift‐diffusion simulation; and the experimental measurement of a poly(3‐hexylthiophene) (P3HT) OECT. We show the reduction of the general model to simple time‐dependent equations for the average ionic/hole concentration inside the organic film, which produces a Bernards‐Malliaras conservation equation coupled with a diffusion equation. We provide a basic classification of the transient response to a voltage pulse, and the correspondent hysteresis effects of the transfer curves. The shape of transients is basically related to the main control phenomenon, either the vertical diffusion of ions during doping and dedoping, or the equilibration of electronic current along the channel length.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Xing Long Shao,Kyung Min Kim,Kyung Jean Yoon,Seul Ji Song,Jung Ho Yoon,Hae Jin Kim,Tae Hyung Park,Dae Eun Kwon,Young Jae Kwon,Yu Min Kim,Xi Wen Hu,Jin Shi Zhao,Cheol Seong Hwang

DOI: https://doi.org/10.1039/c6nr02800d

IF: 6.7

2016-09-28

Nanoscale

Abstract:Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation between the formation and rupture of the Magnéli-based conducting filament (CF), which is the mechanism of non-polar thermochemical-reaction-based switching, and the electron trapping/detrapping at the defect centers, which is the mechanism of bipolar electronic switching, is examined in detail. The chemical interaction between the TiN top electrode and the TiO2 layer generates a stable and immobile electron trapping layer, which is called a "switching layer", whereas the thin region between the just-mentioned switching layer and the remaining Magnéli CF after the thermochemical reset comprises a non-switching layer. The seemingly very complicated switching behavior with respect to the bias polarity, compliance current, and detailed biasing sequence could be reasonably explained by the phenomenological model based on the combined motions of the CF, switching layer, and non-switching layer. Light-induced detrapping experiments further supplement the suggested switching model.
Asymmetric Rate Behavior of Si Anodes for Lithium‐Ion Batteries: Ultrafast De‐Lithiation versus Sluggish Lithiation at High Current Densities

juchuan li,nancy j dudney,xingcheng xiao,yangtse cheng,chengdu liang,mark w verbrugge

DOI: https://doi.org/10.1002/aenm.201401627

IF: 27.8

2015-01-01

Advanced Energy Materials

Abstract:The combined effect of lithium-ion diffusion, potential-concentration gradient, and stress plays a critical role in the rate capability and cycle life of Si-based anodes of lithium-ion batteries. In this work, Si nanofilm anodes are shown to exhibit an asymmetric rate performance: around 72% of the total available capacity can be delivered during de-lithiation under a high current density of 420 A g(-1) (100C where C is the charge-rate) in 22 s; in striking contrast, only 1% capacity can be delivered during lithiation. A mathematical model of single-ion diffusion is established to elucidate the asymmetric rate performance, which can be mainly attributed to the potential-concentration profile associated with the active material and the ohmic voltage shift under high currents; the difference in chemical diffusion coefficients during lithiation and de-lithiation also plays a role. This clarifies that the charge and discharge rates of lithium-ion-battery electrodes should be evaluated separately due to the asymmetric effect in the electrochemical system.
Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

R. K. Malhan,S. J. Rashid,M. Kataoka,Y. Takeuchi,N. Sugiyama,F. Udrea,G. A. J. Amaratunga,T. Reimann

DOI: https://doi.org/10.4028/www.scientific.net/msf.600-603.1067

2008-01-01

Materials Science Forum

Abstract:Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.
Switching response and ionic hysteresis in organic electrochemical transistors

Juan Bisquert,Baurzhan Ilyassov,Nir Tessler

2024-04-26

Abstract:Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of OECT, such as the switching time and the synaptic properties for neuromorphic applications. Here we address the combined ionic and electronic kinetic effects that cause the dominant hysteresis effects. We use a combination of tools consisting on basic analytical models, advanced 2D drift-diffusion simulation, and the experimental measurement of a Poly(3-hexylthiophene) (P3HT) OECT, working in an accumulation mode. We develop a general transmission line model considering drift electronic transport and ionic injection and diffusion from the electrolyte. We provide a basic classification of the transient response to a voltage pulse, according to the dominant ionic or electronic relaxation time, and the correspondent hysteresis effects of the transfer curves according to the general categories of inductive and capacitive hysteresis. These are basically related to the main control phenomenon, either the vertical diffusion of ions during doping and dedoping, or the equilibration of electronic current along the channel length.

Applied Physics
Delayed-Switch-On Effect In Metal-Insulator-Metal Organic Memories

m l wang,jinshui zhou,x d gao,b f ding,zhiyan shi,x y sun,x m ding,x y hou

DOI: https://doi.org/10.1063/1.2794434

IF: 4

2007-01-01

Applied Physics Letters

Abstract:We report a delayed-switch-on effect in organic memories; i.e., the organic memory devices can automatically switch from off state to on state after a certain period of time when biased at voltages below the threshold voltage. Meanwhile, the lower the voltage is, the longer the switching time will be. The time scales from milliseconds to about 10(4) s with decreasing voltage. Moreover, by applying a certain voltage between threshold voltage and V-max, intermediate states are also obtained. The existence of filamentary microconducting channels in the organic layer is proposed to be responsible for the observed switching phenomenon. (c) 2007 American Institute of Physics.
Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor

Shaorui Li,Chenglin Yu,Yongchao Wang,Ke Zhang,Kaili Jiang,Yayu Wang,Jinsong Zhang

DOI: https://doi.org/10.1021/acsami.2c10640

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene field-effect transistors (FETs) have attracted tremendous attention owing to the single-atomic-layer thickness and high electron mobility for potential applications in next-generation electronics. With regards to switching methodology, the electric-field-induced metal-insulator transition offers a new strategy to produce a large on/off current ratio through reversible electrochemical hydrogenation of the graphene channels. Therefore, the performance of such electrochemical graphene FETs greatly relies on the kinetics of hydrogenation reaction. Here, we show that the switching time can be systemically controlled by the applied gate voltages and geometries of graphene channels. The turn-on and turn-off time display an exponential dependence on the gate voltages, manifesting the dominated Tafel-form kinetics of hydrogenation reaction in a two-dimensional limit. Moreover, the turn-off time is inversely proportional to the channel width but independent of the length, while the turn-on time relies on both the width and length, as well as the off-state gate voltage and duration. Our work improves the response time to the magnitude of tens of microseconds and advances the application of graphene-based electronic devices.
Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Natalia V. Andreeva,Eugeny A. Ryndin,Anatoliy E. Petukhov,Oleg Y. Vilkov,Amgad A. Al‐Saman

DOI: https://doi.org/10.1002/aelm.202300806

IF: 6.2

2024-03-07

Advanced Electronic Materials

Abstract:Engineering of interfaces and point defects in ferroelectric memristors provides a powerful tool to design non‐volatile memory devices for neuromorphic computing. The developed novel drift‐diffusion model built on a memristive device of mixed electron‐ionic nature can be used to predict the resistive switching effects based on the combined contribution of electronic and oxygen‐ionic processes in ferroelectric memristors. Engineering of interfaces and point defects in ferroelectric memristors is an efficient way for manipulating the resistive switching effects of mixed ionic‐electronic nature. However, an interplay between the defects, interfacial properties, and ferroelectric polarization as well as their influence on the resistance state tuning are yet to be revealed. By considering the memristive device built on a thin polycrystalline BaTiO3 film, a drift‐diffusion model of non‐stationary processes is developed. The model is based on Poisson and continuity equations solved numerically and accounts for various transport mechanisms for electrons, holes, and oxygen vacancies. Comparing simulated resistive effects with experimental data taken in a wide temperature range, it is shown that an appearance of the analog resistive switching cannot be explained solely by oxygen‐ionic transport. Investigated switching dynamics claims the oxygen vacancies redistribution to be responsible for the analog character of the switching at the prevalence of the electron hopping transport. Crucially, the required dynamics of the vacancies redistribution is achieved only in a narrow range of their mobility. These results can be used in designing the ferroelectric memristors for nonvolatile multilevel memory devices satisfying the requirements that arise at the stages of their integration into neuromorphic architectures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Asymmetric Resistive Switching Processes in W:Alox/Woy Bilayer Devices

Wu Ming-Hao

DOI: https://doi.org/10.1088/1674-1056/24/5/058501

2015-01-01

Chinese Physics B

Abstract:Asymmetric resistive switching processes were observed in W:AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlOx/WOy device structure is proposed to explain this switching time difference.
Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Yunyang Wan,Zhendong Jiang,Lanrong Zou,Meng Zhang

DOI: https://doi.org/10.1088/1402-4896/ad896a

2024-10-23

Physica Scripta

Abstract:This study represents the investigation into the degradation of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under dynamic off-state stress, with a focus on transition times as rapid as 1 nanosecond (ns). The study found that dynamic off-state stress with larger amplitude leads to more severe device degradation. Unlike previous studies, both the rising time (tr) and falling time (tf) of the pulse significantly influence the hot carrier (HC) degradation in the poly-Si TFTs. The on-state current degradation rate (ΔIon) after 104 s stress dramatically increases from 11.8% to 80.8% when tr decreases from 500 ns to 1 ns. When tf decreases from 500 ns to 1 ns, ΔIon also dramatically increases from 22.9% to 69.2%. Combined with transient simulations, the source of the carrier for HC degradation is clarified and consequently, a non-equilibrium PN junction degradation model modulated by accumulated electrons is developed.

physics, multidisciplinary
The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors

Michael Skowrons,Andreas Schander,Alvaro Galeana Perez Negron,Björn Lüssem

DOI: https://doi.org/10.1002/aelm.202300673

IF: 6.2

2024-03-13

Advanced Electronic Materials

Abstract:The high transconductance of organic electrochemical transistors (OECTs) has made OECTs a valid candidate for wearable sensor systems. However, its large transconductance is often accompanied by large switching time constants, making the transconductance alone an imperfect benchmark. Here, the trade‐off between transconductance and speed of OECTs is studied, and a vertical transistor design to optimize this balance is proposed. The high transconductance gm of organic electrochemical transistors (OECTs) has received widespread attention and made OECTs a valid candidate for wearable sensor systems. However, the large transconductance is often accompanied by large switching time constants, τ, making the transconductance an imperfect benchmark. For a fair assessment, the ratio of transconductance to switching time constant gmτ has to be considered instead of any single parameter in isolation. One approach put forward to optimize OECTs is a vertical design, in which the channel length can be scaled into the sub‐micrometer regime. Here, a new vertical device geometry is proposed, in which the active volume of the mixed conductor is confined to a small cavity between source and drain, yielding excellent performance and reproducibility. It is shown that this approach yields optimized gmτ ratios instead of maximized transconductance only. However, this scaling is effective only in a small range of device dimensions and requires careful optimization of the device to not be limited by parasitic effects such as excess volume of the mixed conductor or parasitic series resistances. Overall, the design considerations discussed here provide new guidelines to optimize OECTs, not only for high transconductance but for operation at high frequencies as well.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO3/Gaq3/AlOx/Co Spintronic Crossbar Devices

Andrei Shumilin,Prakriti Neha,Mattia Benini,Rajib Rakshit,Manju Singh,Patrizio Graziosi,Raimondo Cecchini,Luca Gnoli,Mirko Prezioso,Ilaria Bergenti,Valentin Alek Dediu,Alberto Riminucci

DOI: https://doi.org/10.1002/aelm.202300887

IF: 6.2

2024-04-02

Advanced Electronic Materials

Abstract:The time dynamics of the resistive state in synaptic devices is a crucial parameter of their performance. In the molecular spintronic devices studies, this time dynamics is glassy, i.e. their conductance changed logarithmically over a wide range of time scales. This shed light on the physics of the process and is indicative of a flat distribution of transport energy levels in the organic semiconductor. In the figure, the green ribbon represents the energy landscape for the impurities in the molecular semiconductor film, the blue balls represent the impurities, the blue arrows indicate migration due to the applied electric field while the red ones indicate thermally activated migration, responsible for the glassy time dynamics. The development of neuromorphic devices is a pivotal step in the pursuit of low‐power artificial intelligence. A synaptic analog is one of the building blocks of this vision. The synaptic behavior of molecular La0.7Sr0.3MnO3/tris(8‐hydroxyquinolinato)gallium/AlOx/Co spintronic devices is studied, where the conductance plays the role of the synaptic weight. These devices are arranged in a crossbar configuration, the most effective architecture for the purpose. The conductance of each cross point is controlled separately by the application of voltage pulses: when set in the high conductance potentiated state, the devices show a spin‐valve magnetoresistance, while in the low conductance depressed state, no magnetoresistance is observed. The time dependence of the resistive switching behavior is an important parameter of the synaptic behavior and is very revealing of the underlying physical mechanisms. To study the time dynamics of the resistive switching after the voltage pulses, the response of the device to trains of potentiation and depression pulses, and the time‐resolved conductivity relaxation after the pulses are measured. The results are described with the conductivity model based on impurity energy levels in the organic semiconductor's gap. A flat distribution of the activation energies necessary to move these impurities is hypothesized, which can explain the observed glassy behavior.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Observation of Two Resistance Switching Modes in TiO2memristive Devices Electroformed at Low Current

Feng Miao,J. Joshua Yang,Julien Borghetti,Gilberto Medeiros-Ribeiro,R. Stanley Williams

DOI: https://doi.org/10.1088/0957-4484/22/25/254007

IF: 3.5

2011-01-01

Nanotechnology

Abstract:We report the observation of two resistance switching modes in certain 50 nm × 50 nm crossbar TiO(2) memristive devices that have been electroformed with a low-current process. The two switching modes showed opposite switching polarities. The intermediate state was shared by both modes (the ON state of the high-resistance mode or the OFF state of the low-resistance mode) and exhibited a relaxation to a more resistive state, including an initial transient decay. The activation energies of such a decay and ON-switching to the intermediate state were determined to be 50-210 meV and 1.1 eV, respectively. Although they are attributed to the coexistence of charge trapping and ionic motion, the ionic motion dominates in both switching modes. Our results indicate that the two switching modes in our system correspond to different switching layers adjacent to the interfaces at the top and bottom electrodes.
Transient Response and Ionic Dynamics in Organic Electrochemical Transistors

Chao Zhao,Jintao Yang,Wei Ma

DOI: https://doi.org/10.1007/s40820-024-01452-y

2024-07-02

Abstract:The rapid development of organic electrochemical transistors (OECTs) has ushered in a new era in organic electronics, distinguishing itself through its application in a variety of domains, from high-speed logic circuits to sensitive biosensors, and neuromorphic devices like artificial synapses and organic electrochemical random-access memories. Despite recent strides in enhancing OECT performance, driven by the demand for superior transient response capabilities, a comprehensive understanding of the complex interplay between charge and ion transport, alongside electron-ion interactions, as well as the optimization strategies, remains elusive. This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses, emphasizing advancements in device physics and optimization approaches. We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications, as well as the impact of materials, morphology, device structure strategies on optimizing transient responses. This paper not only offers a detailed overview of the current state of the art, but also identifies promising avenues for future research, aiming to drive future performance advancements in diversified applications.
Delay Effect Of Switch-On In A Supertwisted Nematic Cell

Fuzi Yang,Youmei Dong,Lizhen Ruan,J. R. Sambles

DOI: https://doi.org/10.1063/1.1826240

IF: 4

2004-01-01

Applied Physics Letters

Abstract:By using a convergent beam system and the fully leaky guided mode technique the switch-on dynamics of an 180degrees supertwisted nematic have been studied. Using the Ericksen-Leslie theory and analyzing the guided mode data taken from the cell, the director structure in the cell at different times during switch-on is obtained. For three different applied voltages it is found that the switch-on time is strongly dependent on the applied field-the higher voltage corresponds to faster switching, with no evidence of backflow. A delay at the beginning of the switch-on process has been found and explored for different applied fields. This leads to a suggestion for increasing the switch-on speed of such devices by 25%. (C) 2004 American Institute of Physics.
Nonlinear Dependence of Set Time on Pulse Voltage Caused by Thermal Accelerated Breakdown in the Ti/HfO2/Pt Resistive Switching Devices

M. G. Cao,Y. S. Chen,J. R. Sun,D. S. Shang,L. F. Liu,J. F. Kang,B. G. Shen

DOI: https://doi.org/10.1063/1.4766737

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Dynamic processes of resistance switching have been systemically investigated for the Ti/HfO2/Pt bipolar devices. Different transient characteristics were observed in the set and reset processes. The set process consisted of a waiting step and a following abrupt transition, whereas the reset process demonstrated a gradual resistance change. Nonlinear dependence of set time on pulse voltage was observed and explained by the thermally accelerated dielectric breakdown of local switching regions. The accumulation and dissipation effects observed for different pulse treatments strongly supported the proposed model, which suggests a possible approach to overcome the voltage-time dilemma.

Slow on, fast off

Understanding Asymmetric Switching Times in Accumulation Mode Organic Electrochemical Transistors

Why accumulation mode organic electrochemical transistors turn off much faster than they turn on

Effect of Intrachannel Ion Transport on Transient Characteristics of Nanochannels

Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

Switching Response in Organic Electrochemical Transistors by Ionic Diffusion and Electronic Transport

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Asymmetric Rate Behavior of Si Anodes for Lithium‐Ion Batteries: Ultrafast De‐Lithiation versus Sluggish Lithiation at High Current Densities

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

Switching response and ionic hysteresis in organic electrochemical transistors

Delayed-Switch-On Effect In Metal-Insulator-Metal Organic Memories

Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Asymmetric Resistive Switching Processes in W:Alox/Woy Bilayer Devices

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors

Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO3/Gaq3/AlOx/Co Spintronic Crossbar Devices

Observation of Two Resistance Switching Modes in TiO2memristive Devices Electroformed at Low Current

Transient Response and Ionic Dynamics in Organic Electrochemical Transistors

Delay Effect Of Switch-On In A Supertwisted Nematic Cell

Nonlinear Dependence of Set Time on Pulse Voltage Caused by Thermal Accelerated Breakdown in the Ti/HfO2/Pt Resistive Switching Devices