Broadband photodetector based on vapor-deposited selenium self-supporting films
Heng Zhang,Lu li,Ding-shan Zheng,Yan Xiong,Cheng Yu,Hong Yin,Zao Yi,Xiang-xiang Yu,Wen-xing Yang,Heng Zhang,Lu li,Ding-shan Zheng,Yan Xiong,Cheng Yu,Hong Yin,Zao Yi,Xiang-xiang Yu,Wen-xing Yang
DOI: https://doi.org/10.1016/j.ceramint.2022.06.075
IF: 5.532
2022-10-01
Ceramics International
Abstract:As a high-quality p-type semiconductor, Selenium (Se) has become an important potential candidate for photoelectric devices due to its high photoconductivity, non-linear optical response, and large piezoelectricity. However, the intrinsic Se has a wide bandgap (about 1.77 eV), so it is usually used for photodetection in the visible region. In this work, the Se self-supporting films have been successfully fabricated by an improved physical vapor deposition (PVD) method, and a metal-semiconductor-Metal (MSM) photodetector based on the Se self-supporting films has been designed for the first time. The photodetector shows broadband photoresponse from visible light to near-infrared (450–1550 nm), which is consistent with the experimental absorption spectrum of the obtained film. Besides, photodetection results indicate that the device exhibits a fast response speed (Tr = 4.5 ms, Td = 63.8 ms) with perfect responsivity (8.1 μA/W) and detectivity (1.3 × 105) under 3 V bias voltage and 450 nm (0.971 mW) light irradiation. The research of this paper will further enrich the application and development of traditional Se semiconductors in the field of optoelectronics.
materials science, ceramics