Effect of Annealing on Electrical Properties of Radio-Frequency-sputtered ZnO Films
Y. I. Alivov,X. Bo,S. Akarca-Biyikli,Q. Fan,J. Xie,N. Biyikli,K. Zhu,D. Johnstone,H. Morkoç
DOI: https://doi.org/10.1007/s11664-006-0093-1
IF: 2.1
2006-01-01
Journal of Electronic Materials
Abstract:We report on the electrical properties of ZnO films and devices grown on different substrates by radio-frequency magnetron sputtering. The films grown on c-plane sapphire were annealed in the range 800–1,000°C. The electron concentration increased with annealing temperature reaching 1.4×1019 cm−3 for 1,000°C. Mobility also increased, however, reaching its maximum value 64.4 cm2/V · sec for 950°C anneal. High-performance Schottky diodes were fabricated on ZnO films grown on n-type 6H-SiC by depositing Au/Ni(300/300 Å). After annealing at 900°C, the leakage current (at −5 V reverse bias) decreased from 2.2 × 10−7 A to ∼5.0 × 10−8 A after annealing at 900°C, the forward current increased by a factor of 2, and the ideality factor decreased from 1.5 to 1.03. The ZnO films were also grown on p-type 6H-SiC, and n-ZnO/p-SiC heterostructure diodes were fabricated. The p-n diode performance increased dramatically after annealing at 950°C. The leakage current decreased from 2.0×10−4 A to 3.0×10−7 A at −10 V reverse bias, and the forward current increased slightly from 2.7 mA to 3.9 mA at 7 V forward bias; the ideality factor of the annealed diode was estimated as 2.2, while that for the as-grown sample was considerably higher.