Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition

Chia-Hsun Hsu,Zhi-Xuan Zhang,Pao-Hsun Huang,Wan-Yu Wu,Sin-Liang Ou,Shui-Yang Lien,Chien-Jung Huang,Ming-Kwei Lee,Wen-Zhang Zhu
DOI: https://doi.org/10.1016/j.ceramint.2020.11.232
IF: 5.532
2021-03-01
Ceramics International
Abstract:<p>In this study, tin oxide (SnO<sub>2</sub>) films are prepared by using plasma enhanced atomic layer deposition (PEALD) with tetrakis(dimethylamino)tin(IV) (TDMA-Sn) as the Sn metal source and O<sub>2</sub>/Ar mixture as the oxidant. The plasma power is varied from 1000 to 3000 W to investigate its influence of oxygen vacancies and defects on the SnO<sub>2</sub> film properties. The experimental results show that the plasma power plays an important role in the deposition of SnO<sub>2</sub> films. Unwanted Sn<sub>3</sub>O<sub>4</sub> formation is observed at both of low and high powers. The optical emission spectra of the plasma with different power are analyzed to obtain the insight of the mechanism of the PEALD SnO<sub>2</sub> films growth. The optimal plasma power of 1500 W is found to be very close to the threshold where the oxygen radical intensity starts to sharply increase. Lower and higher powers can lead to insufficient oxidation and strong ion bombardment, respectively, resulting in reduced SnO<sub>2</sub> film quality.</p>
materials science, ceramics
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