Fabrication of broadband MnS/NiCo 2 S 4 heterojunction photodetector by successive ionic layer adsorption and reaction technique

V.K. Amritha,Sushmee Badhulika

DOI: https://doi.org/10.1016/j.jphotochem.2024.115627

IF: 5.141

2024-04-05

Journal of Photochemistry and Photobiology A Chemistry

Abstract:Photodetectors are pivotal components in modern electronics and energy harvesting systems, serving distinct yet essential roles. In the realm of next-generation electronics, traditional single-functional materials are no longer sufficient to meet evolving demands. In response to these challenges, we present a novel approach in which we develop a hetero-junction semiconductor composed of NiCo 2 S 4 /MnS. Through our research, we explore the effects of various light wavelengths on the photo response of the as-fabricated device. The heterojunction device was fabricated on a cellulose paper substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) technique. X-ray diffraction (XRD) analysis confirmed the presence of the cubic phase of NiCo 2 S 4 and the hexagonal phase of γ MnS on the paper substrate, with Raman and FT-IR peaks validating the presence of both materials. Scanning electron microscopy (SEM) was employed to examine the thin film's morphology. Additionally, the UV–Vis absorption spectrum of the components was investigated, revealing bandgap values of 3.2 eV for MnS and 1.9 eV for NiCo 2 S 4 , justifying the device's response across a wide electromagnetic spectrum. The device exhibited rising responsivities of 0.310 mA/W for UV light, 40.76 mA/W for visible light, and 0.07 mA/W for IR light. Furthermore, the device demonstrated response times of 0.64 s (UV), 1.16 s (Visible), and 0.58 s (IR) when illuminated with light of varying wavelengths The as-fabricated heterojunction device holds the potential to serve as a promising candidate in photodetection.

chemistry, physical