ZnSSe Decorated Reduced Graphene Oxide for Enhanced Photoelectric Properties

Yifan Deng,Yun Lei,Zehui Tang,Jiong Chen,Linhui Luo,Yongqin Wang,Can Li,Beibei Du,Shiquan Wang,Zhengguang Sun
DOI: https://doi.org/10.1002/ppsc.202300101
IF: 3.467
2023-09-10
Particle & Particle Systems Characterization
Abstract:Abstract ZSSG (ZnSSe/rGO) composites are prepared by a hydrothermal method. The structure, morphology and material properties are investigated by various tests. Compared to ZnSe, the diffraction peaks of ZnSSe are moved to a larger angle and located between cubic phase ZnSe and cubic phase ZnS. The photocurrent density of ZSSG20 with 20 wt.% graphene is 2.17×10 −5 A cm −2 , which is 8.9 times higher than that of pure ZnSSe. ZSSG20 has the minimum charge transfer resistance and highest carrier density. The decreased fluorescence intensity in PL spectra indicates that graphene can effectively prevent the recombination of electron‐hole pairs.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
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