Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

The importance of overcoming MOVPE surface evolution instabilities for >1.3 $μ$m metamorphic lasers on GaAs

Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Design and Realization of a 1.55-/Spl Mu/m Patterned Vertical Cavity Surface Emitting Laser with Lattice-Mismatched Mirror Layers

Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

MOCVD growth and thermal stability analysis of 1.2 μm InGaAs/GaAs multi quantum well structure

Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss

MOCVD growth of AlGaInAs/AlGaAs SQW for high-power laser diodes studied by reflectance anisotropy spectroscopy

Enabling MOCVD production on next generation 150 mm Indium Phosphide wafer size

1.48 Mu M Ingaas/Ingaasp Separated Confinement Strained Layer Multiple Quantum Well Lasers

Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Unexpected aspects of strain relaxation and compensation in InGaAs metamorphic structures grown by MOVPE

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Characterization of GaInN/GaN layers for green emitting laser diodes

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices