Abstract:Point defects in semiconductors are attractive candidates for quantum information science applications owing to their ability to act as spin-photon interface or single-photon emitters. However, the coupling between the change of dipole moment upon electronic excitation and stray electric fields in the vicinity of the defect, an effect known as Stark shift, can cause significant spectral diffusion in the emitted photons. In this work, using first principles computations, we revisit the methodology to compute the Stark shift of point defects up to the second order. The approach consists of applying an electric field on a defect in a slab and monitoring the changes in the computed zero-phonon line (i.e., difference in energy between the ground and excited state) obtained from constraining the orbital occupations (constrained-DFT). We study the Stark shift of the negatively charged nitrogen-vacancy (NV) center in diamond using this slab approach. We discuss and compare two approaches to ensure a negatively charged defect in a slab and we show that converged values of the Stark shift measured by the change in dipole moment between the ground and excited states ($\Delta \mu$) can be obtained. We obtain a Stark shift of $\Delta \mu$=2.68D using the semi-local GGA-PBE functional and of $\Delta \mu$=2.23D using the HSE hybrid-functional. The results of the slab computations are significantly different than those obtained with Modern Theory of Polarization ($\Delta \mu$=4.34D for GGA-PBE) indicating a potential issue with the combination of constrained-DFT and Modern Theory of Polarization, at least in certain codes.

First-principles study of the Stark shift effect on the zero-phonon line of the NV center in diamond

A first principles study of the Stark shift effect on the zero-phonon line of the NV center in diamond

Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Strong tunable spin-spin interaction in a weakly coupled nitrogen vacancy spin-cavity electromechanical system

Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond

Thermal Behaviors of the Sharp Zero–phonon Luminescence Lines of NV Center in Diamond

Quantum Vibronic Effects on the Excitation Energies of the Nitrogen-Vacancy Center in Diamond

The phonon-modulated Jahn-Teller distortion of the nitrogen vacancy center in diamond

The diamond NV-center transition energies in the vicinity of an intrinsic stacking fault

First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre

Theoretical polarization of zero phonon lines in point defects

Spectral Broadening and Ultrafast Dynamics of a Nitrogen-Vacancy Center Ensemble in Diamond

Nuclear spin relaxation in solid state defect quantum bits via electron-phonon coupling in their optical excited state

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

Phonon Induced Spin Dephasing Time of Nitrogen Vacancy Centers in Diamond from First Principles

Modeling temperature-dependent population dynamics in the excited state of the nitrogen-vacancy center in diamond

Temperature dependent energy gap shifts of single color center in diamond based on modified Varshni equation

Structural stability of Pr-related defects in diamond and electronic structure single photon source: A first-principles study

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC