Significant dark current suppression in perovskite photodetectors using hole transport materials of lithium-doped vanadium oxide

Mengying Long,Luhui Yang,Dongmin An,Jialun Dai,Yingyue Wang,Xiang Yao

DOI: https://doi.org/10.1016/j.optmat.2023.114652

IF: 3.754

2023-12-04

Optical Materials

Abstract:Suppressing dark current density ( J dark ) is one of most important strategies for improving responsivity ( R ), detectivity ( D* ), and linear dynamic rang (LDR) of perovskite photodetectors (PDs). However, the modulation mechanism of intrinsic and interfacial features of hole transport materials (HTMs) on their photodetection performance remains unclear and is related to complicated factors, resulting in perovskite PDs to generally suffer from high J dark . In this study, we systematically investigated the effect of Li-doped VO X on the photodetection performance of perovskite PDs. The Li-doped VO X HTMs showed superior conductivity, high transmittance, and enlarged interfacial adhesion between the HTMs and perovskite layer. The PDs based on Li-doped VO X HTMs exhibited at least two orders lower J dark and almost 1.6 times greater photocurrent densities ( J ph ) compared with those based on pristine VO X HTMs, while significantly maintained high external quantum efficiency (∼84 %) and impressive D max * of 1.23 × 10 13 Jones. The enlarged surface roughness of Li-doped VO X HTMs leads to the enhancement of the interfacial adhesion between the HTMs and perovskite layer, which decreases the defects density of perovskite layer and trap-assisted recombination inside PDs, thus resulting in the significant suppression of J dark and the improved collection of photoinduced charges. Overall, our findings provide a facial way to suppress J dark for enhancing device performance of PDs.

materials science, multidisciplinary,optics