Abstract:Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) sulfide is one such material which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g., SnO2) and higher tin sulfides (e.g., Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which rely heavily on having precursors that are volatile, stable, and reactive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), (dimethylamido)(N-phenyl-N′,N′-dimethylthiouriate)tin(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor 1 is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, fluorine doped tin oxide (FTO), Si, and glass substrates at the optimized deposition temperatures of 375 and 300 °C, respectively. The densely packed polycrystalline thin films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films shows distinctly different optical properties with direct band gaps of 1.34 and 1.78 eV, respectively. Furthermore, photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.

Aerosol Assisted Chemical Vapour Deposition (AACVD) of Zinc dichalcogenoimidodiphosphinate Complexes for the Deposition of Zinc Selenide Thin Films

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Zinc and Cadmium thioamidate complexes: Rational design of single-source precursors for the AACVD of ZnS

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Ethyl Zinc β-Ketoiminates and β-Amidoenoates: Influence of Precursor Design on the Properties of Highly Conductive Zinc Oxide Thin Films from Aerosol-Assisted Chemical Vapour Deposition

Deposition of a high entropy thin film by aerosol-assisted chemical vapor deposition

Synthesis, Characterisation and Reactivity of a Zinc Triazenide for Potential Use in Vapour Deposition

Preparation of ZnSe Films Through Chemical Solution Reduction Process

The effect of selenium ions concentration on zinc selenide thin films prepared by photo-assisted chemical bath deposition method

Fabrication and Electrochemical Characterization of Zinc Selenide Thin Film by Pulsed Laser Deposition

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

Solventless Synthesis of Zinc Sulphide Nanoparticles from Zinc Bis(diethyldithiocarbamate) as a Single Source Precursor

SYNTHESIS OF STRUCTURED ZINC SELENIDE FOR OPTOELECTRONIC APPLICATIONS

Studies on the photochemical deposition (PCD) of II–VI compound semiconductor thin films of ZnS from aqueous solution

The Preparation of Cu2ZnSnSe4 Films by Selenization of the Oxide Precursors

Effect of Chemical Bath Deposition Variables on the Properties of Zinc Sulfide Thin Films: A Review

Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors

Precursor Concentration Effect on the Properties of ZnIn2Se4 Layers Grown by Chemical Bath Deposition

Optimization of Electrochemical Aspects for Epitaxial Depositing Nanoscale ZnSe Thin Films

Formation of Cu2ZnSnSe4 Through Direct Selenization of Metal Oxides