A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications (Adv. Funct. Mater. 3/2022)

Fanlu Zhang,Xutao Zhang,Ziyuan Li,Ruixuan Yi,Zhe Li,Naiyin Wang,Xiaoxue Xu,Zahra Azimi,Li Li,Mykhaylo Lysevych,Xuetao Gan,Yuerui Lu,Hark Hoe Tan,Chennupati Jagadish,Lan Fu
DOI: https://doi.org/10.1002/adfm.202270020
IF: 19
2022-01-01
Advanced Functional Materials
Abstract:Infrared Photodetectors In article number 2103057, Ziyuan Li, Lan Fu, and co‐workers develop a new crystal facet engineering strategy to achieve epitaxial growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays. This leads to the demonstration of a low threshold room temperature nanowire laser and broadband infrared photodetector with high responsivity and fast response time, promising for optical communication applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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