Abstract:Quantifying local structure is critical to understand and control material properties.While pair distribution function techniques from diffraction are commonly used to investigate the average local structure of a material, these approaches are limited by the lack of chemically and spatially resolved details.While electron microscopy exhibits superior spatial resolution, accurate determination of structure has been limited by imprecise knowledge of the illuminating and diffraction conditions (parallel beam) or sample drift (STEM).In contrast, the revolving STEM (RevSTEM) method introduces scan rotation between a series of fast-acquisition STEM images to encode the information about sample drift and leads to near distortion-free imaging after post-processing [1].In this talk, we will discuss how RevSTEM imaging can be made highly accurate and precise for local structure determination.Beyond drift, we will also show that the scan system axes are not orthonormal, resulting a 'global residual distortion' which must be calibrated to achieve accuracy [2].We will demonstrate and explain how to accurately and precisely remove this distortion.This is achieved using measurement of the projected-PDF (P-PDF) by locating and calculating the distance between all n th nearest neighbors (Figure 1a) [3].We will show how the standard deviation of each n th near neighbor distance can then be used to determine the coefficients of the calibration transformation matrix (Figure 1b):. Using well-calibrated RevSTEM imaging, we will then show how this approach opens new avenues to characterize local structure in complex oxide materials.Multiple case studies for complex oxides will be presented, including thin film and bulk materials [4].For example, we will show how picometer precise measurements enable the capability to directly observe static atomic displacements within a complex oxide solid solution exhibiting differences in local bonding (Figure 2a).We will also explore how local deviations from cubic symmetry can be observed in the oscillations of the standard deviations from the P-PDF (Figure 2b).Finally, we will discuss the application of application of spatial statistics, such as Bayesian classifiers, to explore the connection between local chemistry and structure [5].

Direct Quantifying Charge Transfer by 4D-STEM: A Study on Perfect and Defective Hexagonal Boron Nitride

Sensitivity of 4D-STEM to Valence Electron Distribution Based on Multipole Density Formalism

Mapping Valence Electron Distribution and Magnetic Field by 4D-STEM

Real-space charge-density imaging with sub-ångström resolution by four-dimensional electron microscopy

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM

Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: an ab initio study

Impact of beam size and diffraction effects in the measurement of long-range electric fields in crystalline samples via 4DSTEM

Angstrom-scale Magnetic Measurements of a Metallic Antiferromagnet with 4D-STEM

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Imaging the electron charge density in monolayer MoS 2 at the Ångstrom scale

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy

4D-STEM Ptychography for Electron-Beam-Sensitive Materials

Seeing into Materials with Aberration-corrected STEM and First-Principles Theory

Quantitative atomic cross section analysis by 4D-STEM and EELS

Data-efficient 4D-STEM in SEM: Beyond 2D Materials to Metallic Materials

Direct Imaging of Charge Redistribution due to Bonding at Atomic Resolution via Electron Ptychography

Toward Accurate Measurement of Electromagnetic Field by Retrieving and Refining the Center Position of Non-Uniform Diffraction Disks in Lorentz 4D-STEM

Detecting charge transfer at defects in 2D materials with electron ptychography

Quantifying Local Structure of Complex Oxides Using Accurate and Precise Scanning Transmission Electron Microscopy

Robust Local Thickness Estimation of Sub-Micrometer Specimen by 4D-STEM