Quantum Dot Enabled Perovskite Thin Film with Enhanced Crystallization, Stability, and Carrier Diffusion via Pulsed Laser Nanoengineering

Chunpeng Song,Huanrui Yang,Feng Liu,Lei Ye,Gary J. Cheng
DOI: https://doi.org/10.1002/admi.202001021
IF: 5.4
2020-08-23
Advanced Materials Interfaces
Abstract:<p>The temperature control at the material interface, such as grain boundaries, is critical for defect density, and phases, which are important for high‐performance perovskite‐based optoelectronic devices. However, it is challenging to fine‐tune the microstructures in perovskite films with well‐controlled grain structure, interface defects, porosity, phase structure, and strains, simultaneously. Here, pulsed laser technology is combined with carbon quantum dots (CQDs) into perovskite absorbers with pore‐free, less defect, high crystallinity, enhanced absorption, low stress, and phase‐stabilized microstructures. Due to laser–CQD interaction‐induced grain boundary microstructure changes, perovskite films can be fabricated with much larger grains (&gt;10 times) than those after thermal annealing. As CQDs are embedded to passivate grain, this leads to reduced grain boundary barrier at the interface, which significantly improve the carrier transportation in perovskite films. The shift of perovskite band to vacuum energy level leads to remarkable improvement of carrier extraction efficiency and lifetime, leading to much higher mobility of photogenerated carriers and diffusion length (&gt;1 μm). The laser‐induced thermomechanical momentum significantly enhances crystal interface with hydrophobic perovskite film, resulting in much less residual tensile stress by 20 times and excellent stability. Pulsed‐laser‐assisted QD additive engineering has great potential for perovskites films under harsh conditions.</p>
materials science, multidisciplinary,chemistry
What problem does this paper attempt to address?
This paper aims to solve several key problems in the preparation process of perovskite thin films in order to improve their performance, especially to enhance crystallinity, stability and carrier diffusion ability. Specifically, by combining pulsed - laser nano - engineering technology and carbon quantum dots (CQDs), the paper has solved the following problems: 1. **Grain size and defect control**: It is difficult for the traditional thermal annealing method to precisely control the grain size of perovskite thin films and reduce defects. The pulsed - laser technology proposed in the paper can significantly increase the grain size (about 10 times), while reducing the defect density, thereby improving the crystallinity of the thin film. 2. **Carrier transport efficiency**: Grain boundaries in perovskite thin films are the main obstacles to carrier transport. By embedding CQDs at the grain boundaries, the grain boundary barrier can be effectively reduced, promoting carrier transport and improving carrier mobility and diffusion length. 3. **Phase stability**: Perovskite materials are prone to phase transformation under environmental conditions, which affects their long - term stability. In the paper, through the synergy of pulsed - laser treatment and CQDs, the phase stability of perovskite thin films is improved, the appearance of the δ - phase is reduced, and thus the overall stability of the material is enhanced. 4. **Surface property optimization**: Pulsed - laser treatment can also significantly reduce the residual stress in the thin film and improve the hydrophobicity of the surface, further improving the mechanical and environmental stability of perovskite thin films. In conclusion, by combining pulsed - laser technology and CQDs, this paper optimizes the structure and performance of perovskite thin films in multiple aspects, providing new methods and technical means for the development of high - performance perovskite - based optoelectronic devices.