Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Influence of active electrode impurity on memristive characteristics of ECM devices

Design of materials properties and device performance in memristive systems

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

Design of defect-chemical properties and device performance in memristive systems

Electrical performance study of carbon-based memristor with additional MXene capping layer

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO2-Based Memristive Devices

Electrolyte Influence on Properties of Ultra-Thin Anodic Memristors on Titanium

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications

Interfacial Redox Processes in Memristive Devices Based on Valence Change and Electrochemical Metallization.

Evolution Between CRS and NRS Behaviors in MnO 2 @TiO 2 Nanocomposite Based Memristor for Multi-factors-regulated Memory Applications

Metal/TiO 2 Interfaces for Memristive Switches

Electrode-material dependent switching in TaO x memristors

Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO2-Based Memristor: Experimental and First-Principles Investigations

Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO 2 -Based Memristor: Experimental and First-Principles Investigations

Memristors for Memory and Computing Applications

Investigation of Electrical Performance and Reliability of Memristors by Tuning Compliance Current During Electroforming Process

Self-rectifying TiOx-based memristor with synaptic plasticity

Fabrication and Investigation of Ferroelectric Memristors with Various Synaptic Plasticities

Resistive Switching and Artificial Synapses Performance of Co-Evaporated Cs3Cu2I5 Films