Bio-inspired Band Gap Engineering of Zinc Oxide by Intracrystalline Incorporation of Amino Acids

Anastasia Brif,Guy Ankonina,Christina Drathen,Boaz Pokroy

DOI: https://doi.org/10.48550/arXiv.2001.02064

2019-12-29

Materials Science

Abstract:During a bioInspired crystallization process, incorporation of amino acids into the crystal structure of ZnO induces lattice strain that leads to linear bandgap shifts.

What problem does this paper attempt to address?

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

Rui-wen Shao,Kun Zheng,Bin Wei,Yue-fei Zhang,Yu-jie Li,Xiao-dong Han,Ze Zhang,Jin Zou

DOI: https://doi.org/10.1039/c4nr00059e

IF: 6.7

2014-01-01

Nanoscale

Abstract:Bandgap engineering is a common practice for tuning semiconductors for desired physical properties. Although possible strain effects in semiconductors have been investigated for over a half-century, a profound understanding of their influence on energy bands, especially for large elastic strain remains unclear. In this study, a systematic investigation of the transport properties of n-type [0001] ZnO nanowires was performed at room temperature using the in situ scanning tunnelling microscope-transmission electron microscope technique which shows that the transport properties vary with the applied external uniaxial strain. It has been found that the resistance of ZnO nanowires decreases continuously with increasing compressive strain, but increases under increased tensile strain, suggesting piezo-resistive characteristics. A series of near-band-edge emissions were measured and the corresponding variations of bandgaps were obtained during the application of tensile strain of individual ZnO nanowires via cathodoluminescence spectroscopy. From this, a relationship between the changes of energy bandgap and the transport properties, both induced by uniaxial strain, is built.
Uniaxial strain induced anisotropic bandgap engineering in freestanding BiFeO3 films

Xingyu Jiang,Yiren Liu,Yipeng Zang,Yuwei Liu,Tianyi Gao,Ningchong Zheng,Zhengbin Gu,Yurong Yang,Di Wu,Yuefeng Nie

DOI: https://doi.org/10.1063/5.0095955

IF: 6.6351

2022-09-22

APL Materials

Abstract:Strain engineering has been demonstrated to be an effective knob to tune the bandgap in perovskite oxides, which is highly desired for applications in optics, optoelectronics, and ferroelectric photovoltaics. Multiferroic BiFeO 3 exhibits great potential in photovoltaic applications and its bandgap engineering is of great interest. However, the mechanism of strain induced bandgap engineering in BiFeO 3 remains elusive to date. Here, we perform in situ ellipsometry measurements to investigate the bandgap evolution as a function of uniaxial strain on freestanding BiFeO 3 films. Exotic anisotropic bandgap engineering has been observed, where the bandgap increases (decreases) by applying uniaxial tensile strain along the pseudocubic [100] p ([110] p ) direction. First-principles calculations indicate that different O 6 octahedral rotations under strain are responsible for this phenomenon. Our work demonstrates that the extreme freedom in tuning the strain and symmetry of freestanding films opens a new fertile playground for novel strain-driven phases in transition metal oxides.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Strain Gradient Induced Spatially Indirect Excitons in Single Crystalline ZnO Nanowires

Zhao Liu,Xuewen Fu,Dong-Bo Zhang

DOI: https://doi.org/10.1039/d0nr03563g

IF: 6.7

2020-01-01

Nanoscale

Abstract:Spatially indirect excitons are important not only for the exploration of intriguing many-body effects but also for the development of applications such as solar cells with high efficiency. This type of exciton usually exists in heterostructures. Using the generalized Bloch theorem coupled with the density-functional tight-binding method, we reveal that spatially indirect excitons may emerge in single crystalline ZnO nanowires under bending. The underlying mechanism is attributed to the formation of an effective type-II band alignment due to the strain-gradient of the bent nanowires. Our finding paves a new route to realize spatially indirect excitons by strain engineering.
Band gap engineering of ZnO by amino acid capping for optoelectronic and energy applications

Jositta Sherine,Emayavaramban Indubala,Harsh Anish,Harinipriya Seshadri

DOI: https://doi.org/10.1002/er.6214

IF: 4.6

2020-11-30

International Journal of Energy Research

Abstract:ZnO nanorods were capped with aliphatic, aromatic, and heterocyclic amino acids and the effect of capping on morphology, structural, optical, electrochemical, and electrical properties were studied in detail. The formation of coordination complexes between amino acids and ZnO were confirmed by XRD, XPS, and FTIR. The binding energy difference; ∆E = 23 eV explicitly indicates the nanometer range of the complexes formed. The high Iuv/Ivis seen in PL, for all ZnO‐AA complexes except ZnO‐L‐Phe and ZnO‐D‐Phe indicate the crystallinity and minimal defect in the complexes. The band gap of ZnO‐D‐Ala and ZnO‐DL‐Ala reduced by 0.15 eV compared to ZnO NRs (3.0 eV). This reduction in band gap is attributed to the (a) electronic percolation between C=O group of amino acid and Zn in ZnO and (b) increase in crystallite size due to amino acid capping. The free energy of activation for electronic conductivity, in case of ZnO‐D‐Ala and ZnO‐DL‐Ala remained identical to ZnO NRs (127 kJ) as supported by EIS analysis and Arrhenius kinetics. Out of all the aliphatic, aromatic, and heterocyclic amino acids capping on ZnO NRs, the results indicate that ZnO‐D‐Ala and ZnO‐DL‐Ala complexes possess lower band gap and can be used as a viable n‐type semiconductor material in optoelectronic applications such as energy harvesting devices like solar cells.

energy & fuels,nuclear science & technology
Band Gap Tuning of DC Reactively Sputtered ZnON Thin Films

Kiran Jose,J. G. Anjana,Venu Anand,Aswathi R. Nair

DOI: https://doi.org/10.48550/arXiv.2302.08201

2023-02-16

Abstract:Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnO$_x$N$_y$ films with varying elemental concentrations, by precisely controlling the working pressure. The band gap was rigorously analyzed using UV-Visible spectroscopy, which was complemented by EDAX spectroscopy to determine the variations in the elemental composition. The correlation between the microstructure and band gap was investigated through the application of AFM, XRD, and Raman spectroscopy, while the Urbach theorem was used to evaluate the defect states. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.

Materials Science
Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm

Sajid Ali Ansari,Mohammad Mansoob Khan,Shafeer Kalathil,Ambreen Nisar,Jintae Lee,Moo Hwan Cho

DOI: https://doi.org/10.1039/c3nr02678g

IF: 6.7

2013-01-01

Nanoscale

Abstract:Band gap narrowing is important and advantageous for potential visible light photocatalytic applications involving metal oxide nanostructures. This paper reports a simple biogenic approach for the promotion of oxygen vacancies in pure zinc oxide (p-ZnO) nanostructures using an electrochemically active biofilm (EAB), which is different from traditional techniques for narrowing the band gap of nanomaterials. The novel protocol improved the visible photocatalytic activity of modified ZnO (m-ZnO) nanostructures through the promotion of oxygen vacancies, which resulted in band gap narrowing of the ZnO nanostructure (Eg = 3.05 eV) without dopants. X-ray diffraction, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance spectroscopy, Raman spectroscopy, photoluminescence spectroscopy and high resolution transmission electron microscopy confirmed the oxygen vacancy and band gap narrowing of m-ZnO. m-ZnO enhanced the visible light catalytic activity for the degradation of different classes of dyes and 4-nitrophenol compared to p-ZnO, which confirmed the band gap narrowing because of oxygen defects. This study shed light on the modification of metal oxide nanostructures by EAB with a controlled band structure.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Biaxial Stress-Dependent Optical Band Gap, Crystalline, and Electronic Structure in Wurtzite ZnO: Experimental and Ab Initio Study

Y. F. Li,B. Yao,Y. M. Lu,Y. Q. Gai,C. X. Cong,Z. Z. Zhang,D. X. Zhao,J. Y. Zhang,B. H. Li,D. Z. Shen,X. W. Fan,Z. K. Tang

DOI: https://doi.org/10.1063/1.3000601

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:The relationship between band gap and biaxial stress in wurtzite ZnO thin films has been investigated by side-inclination x-ray diffraction technique and optical absorbance spectrum as well as ab initio calculation. The experimental result shows that differing from other semiconductor thin films with hexagonal structure, such as GaN, the band gap of ZnO thin films increases with the increase in biaxial tensile stress. For explaining the difference, ab initio calculation is performed to simulate the relationship between band gap and biaxial stress of wurtzite ZnO and GaN. The calculated result indicates that the band gap of ZnO increases under biaxial tensile stress but GaN is opposite, supporting our experimental result. The band offset calculation shows that the conduction-band minimum (CBM) and the valence-band maximum (VBM) of ZnO and GaN offset to low energy under biaxial tensile stress. The VBM offset of ZnO is larger than the CBM, responsible for the increase in band gap. The VBM offset of GaN is smaller than the CBM, responsible for the decrease in band gap. The difference between ZnO and GaN is attributed to the strong p-d coupling in valence band of ZnO, but strong p-p coupling in valence band of GaN.
Strain Tunable Ferroelectric and Dielectric Properties of BaZrO3

Yajun Zhang,Man Liu,Jie Wang,Takahiro Shimada,Takayuki Kitamura

DOI: https://doi.org/10.1063/1.4883298

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:The crucial role of epitaxial (in-plane) strain on the structural, electronic, energetic, ferroelectric, and dielectric properties of BaZrO3 (BZO) is investigated using density-functional theory calculations. We demonstrate that the BZO crystal subjected to a critical compressive (or tensile) strain exhibits non-trivial spontaneous polarization that is higher than that of well-known ferroelectrics BaTiO3, while the BZO crystal is essentially paraelectric in the absence of strain. The electronic structure and Born-effective-charge analyses elucidate that the strain-induced paraelectric-to-ferroelectric transition is driven by the orbital hybridization of d-p electrons between zirconium and oxygen. Through the strain-induced paraelectric-to-ferroelectric phase transition, the dielectric response of BZO is significantly enhanced by the in-plane strain. The tensile strain increases the in-plane dielectric constant by a factor of seven with respect to that without the strain, while the compression tends to enhance the out-of-plane dielectric response. Therefore, strain engineering makes BZO an important electromechanical material due to the diversity in ferroelectric and dielectric properties.
Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Chenlin Wang,MinJu Ying,Jie Lian,MingYang Wei,Qingfen Jiang,Zhen Xu,Yu Zhang,Yueming Wang

DOI: https://doi.org/10.1016/j.apsusc.2021.151703

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:In this work, we use ion implantation to implant Mn ions and As ions into the ZnO films prepared by molecular beam epitaxy. The surface morphology and crystalline structure of ZnO thin films are investigated by X-ray diffraction, atomic force microscopy and Raman spectroscopy. First-principles calculations discover the halfmetallic property of the ZnO films implanted with Mn ions. The effects of Mn ions and As ions implantation on the absorption edges, refractive index (n), extinction coefficient (k) and dielectric constant of ZnO films are studied by transmission spectra, absorption spectroscopy and spectroscopic ellipsometric technique. From the spectroscopic ellipsometry (SE), the n and k of the films have increased after ion implantation. Due to the halfmetallic properties of the Mn-implanted ZnO film, the variation trend of the peaks of n and k with wavelength is much gentler than the peak of unimplanted ZnO film. The dielectric constant measured by SE and the results of photoluminescence spectra reveal that the electron transition of ZnO films is weakened by Mn ions implantation. The results provide a new direction for the design and optimization of optoelectronic devices based on ZnO thin films with semi-metallic properties.
Controlling the Band Gap of ZnO by Programmable Annealing

Shouzhi Ma,Houkun Liang,Xiaohui Wang,Ji Zhou,Longtu Li,Chang Q Sun

DOI: https://doi.org/10.1021/jp207237d

2011-10-03

The Journal of Physical Chemistry C

Abstract:Annealing has been extensively used to control crystal growth and physical properties of materials with unfortunately unclear mechanism and quantitative correlations. Here we present the “annealing temperature–grain size–band gap” correlation for ZnO nanocrystals with experimental evidence. Findings revealed that the annealing condition determines the critical size by equating the thermal and the cohesive energy of the undercoordinated atoms in the surface skin, which in turn induce local strain and quantum entrapment, perturbing the Hamiltonian and hence the band gap. The formulation provides a general guideline for controlling crystal growth and performance of materials and makes predictive design and fabrication of functional nanomaterials a reality.
The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire

Geoffrey Tse,Dapeng Yu

DOI: https://doi.org/10.1142/s0217984916500482

2015-01-01

Modern Physics Letters B

Abstract:In this work, the strain dependence of electronic and optical properties in wurtzite zinc oxide (ZnO) lattice were explored. Ab initio density functional theory (DFT) was used in evaluating the energy bandgap and the dielectric tensor, respectively. The influence on the bandgap due to the shear distortion was so small that the reducing linear trends on uniaxial compressive/tensile strain were reported, in which the evolution of the absorption curve with uniaxial strain agrees well with the experimental results across the bending section. This study provides a set of useful data in analyzing the evolution of the optical adsorption across the bending ZnO nanowire, and gives a systematic explanation to the available experiments from the electronic structure’s perspective.
Strain-tunable direct band gap of ZnO monolayer in graphene-like honeycomb structure

Harihar Behera,Gautam Mukhopadhyay

DOI: https://doi.org/10.48550/arXiv.1111.6322

2011-11-28

Abstract:Using full-potential density functional calculations within local density approximation (LDA), we found mechanically tunable band-gap in ZnO monolayer (ML-ZnO) in graphene-like honeycomb structure, by simulated application of in-plane homogeneous biaxial strain. Unstrained ML-ZnO was found to have a direct band gap of energy 1.68 eV within LDA; the actual band gap would be more, since LDA is known to underestimate the gap. Within our simulated strain limit of about plus or minus 10%, the band gap remains direct and shows a strong non-linear variation with strain. The results may find applications in future nano-electromechanical systems (NEMS) and nano-optomechanial systems (NOMS).

Mesoscale and Nanoscale Physics
Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

Zhao Liu,Chi-Yung Yam,Shiwu Gao,Tao Sun,Dong-Bo Zhang

DOI: https://doi.org/10.1088/1367-2630/ab6da1

2020-01-01

New Journal of Physics

Abstract:Due to their excellent structural flexibility, low dimensional materials allow to modulate their properties by strain engineering. In this work, we illustrate the phonon calculation of deformed quasi-one dimensional nanostructures involving inhomogeneous strain patterns. The key is to employ the generalized Born-von Karman boundary conditions, where the phonon states are characterized with screw and rotational symmetries. We use wurtzite ZnO nanowire (NW) as a representative to demonstrate the validity and efficiency of the present approach. First, we show the equivalence between the phonon dispersions obtained with this approach and that obtained with standard phonon approach. Next, as an application of the present approach, we study the phonon responses of ZnO NWs to twisting deformation. We find that twisting has more influence on the phonon modes resided in the NW shell than those resided around the NW core. For phonon at the NW shell, the modes polarized along the NW axis is more sensitive to twisting than those polarized in the NW radial dimension. Twisting also induces significant reduction in group velocities for a large portion of optical modes, hinting a non-negligible impact on the lattice thermal conductivity. The present approach may be useful to study the strain-tunable thermal properties of quasi-one dimensional materials.
Size-dependent bandgap modulation of ZnO nanowires by tensile strain.

Bin Wei,Kun Zheng,Yuan Ji,Yuefei Zhang,Ze Zhang,Xiaodong Han

DOI: https://doi.org/10.1021/nl301897q

IF: 10.8

2012-01-01

Nano Letters

Abstract:We quantified the size-dependent energy bandgap modulation of ZnO nanowires under tensile strain by an in situ measurement system combining a uniaxial tensile setup with a cathodoluminescence spectroscope. The maximal strain and corresponding bandgap variation increased by decreasing the size of the nanowires. The adjustable bandgap for the 100 nm nanowire caused by a strain of 7.3% reached approximately 110 meV, which is nearly double the value of 59 meV for the 760 nm nanowire with a strain of 1.7%. A two-step linear feature involving bandgap reduction caused by straining and a corresponding critical strain was identified in ZnO nanowires with diameters less than 300 nm. The critical strain moved toward the high strain level with shrunken nanowires. The distinct size effect of strained nanowires on the bandgap variation reveals a competition between core-dominated and surface-dominated bandgap modulations. These results could facilitate potential applications involving nanowire-based optoelectronic devices and band-strain engineering.
Gradient bandgap narrowing in severely deformed ZnO nanoparticles

Yuanshen Qi,Yaron Kauffmann,Anna Kosinova,Askar R. Kilmametov,Boris B. Straumal,Eugen Rabkin

DOI: https://doi.org/10.1080/21663831.2020.1821111

2020-10-06

Materials Research Letters

Abstract:Gradient nanostructured metallic materials with a gradual change of grain boundary and dislocation density display unprecedent mechanical properties. Herein, we uncover a gradient of point defects concentration and concomitant gradient bandgap (E g) narrowing in metal oxide nanoparticles processed by a combination of severe shearing and frictional sliding deformation. Using the valence electron-energy loss spectroscopy technique, we find a gradual decrease of E g from 2.93 eV in the interior to 2.43 eV at the edge of the high-pressure torsion processed ZnO flake-shaped particle. This work paves the way to strain engineering of gradient-structured metal oxide semiconductors for unique functional properties.GRAPHICAL Impact statement We uncover a gradient of oxygen vacancy concentration and concomitant bandgap narrowing in an individual metal oxide nanoparticle processed by a combination of severe shearing and frictional sliding deformation.

materials science, multidisciplinary
Band gap engineering of monolayer ZrGeTe4 via strain: A first-principles study

Mukhtar Lawan Adam,Oyawale Adetunji Moses,Zia Ur Rehman,Zhanfeng Liu,Li Song,Xiaojun Wu

DOI: https://doi.org/10.1016/j.matchemphys.2020.123308

IF: 4.778

2020-01-01

Materials Chemistry and Physics

Abstract:Modulating the bandgap of two-dimensional (2D) semiconductors is of particular importance for electronics, optoelectronics, and sensors applications in the nanoscale. Here, based on first-principles calculations, we report the modulation of electronic, mechanical, and optical properties of a ternary transition metal chalcogenide ZrGeTe4 monolayer with the applied external strain. The perfect 2D ZrGeTe4 crystal is a semiconductor with a direct bandgap of 1.21 eV, exhibiting anisotropic elastic and optical response. Both external compression and tensile strain can reduce its bandgap linearly, resulting in the modulation of its optical absorption edge. In particular, a semiconductor-to-metal transition observed in ZrGeTe4 monolayer under a compression strain. The flexibility and significantly strain-tunable electronics properties in 2D ZrGeTe4 monolayer render its great potential in the nanoscale electronic and optoelectronic applications.
Ab-initio Study of Electronic and Lattice Dynamical Properties of monolayer ZnO under Strain

Saumen Chaudhuri,A. K. Das,G. P. Das,B. N. Dev

DOI: https://doi.org/10.1007/s11664-022-09938-4

2023-08-01

Abstract:First-principles density functional theory based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML) ZnO. Wide range of in-plane tensile and compressive strains along different directions are applied to analyse the modifications in detail. The electronic band gap reduces under both tensile and compressive strains and a direct to indirect band gap transition occurs for high values of biaxial tensile strain. The relatively low rate of decrease of band gap and large required strain for direct to indirect band gap transition compared to other $2$D materials are analysed. Systematic decrease in the frequency of the in-plane and increase in the out-of-plane optical phonon modes with increasing tensile strain are observed. The in-plane acoustic modes show linear dispersion for unstrained as well as strained cases. However, the out-of-plane acoustic mode (ZA), which shows quadratic dispersion in the unstrained condition, turns linear with strain. The dispersion of the ZA mode is analysed using the shell elasticity theory and the possibility of ripple formation with strain is analysed. The strain-induced linearity of the ZA mode indicates the absence of rippling under strain. Finally, the stability limit of ML-ZnO is investigated and found that for $18\%$ biaxial tensile strain the structure shows instability with the emergence of imaginary phonon modes. Furthermore, the potential of ML-ZnO to be a good thermoelectric material is analyzed in an intuitive way based on the calculated electronic and phononic properties. Our results, thus, not only highlight the significance of strain-engineering in tailoring the electronic and vibrational properties but also provide a thorough understanding of the lattice dynamics and mechanical strength of ML-ZnO.

Materials Science
Title Ion-implantation induced nano distortion layer and its influenceon nonlinear optical properties of ZnO single crystals

C. Zheng,S. J. Xu,J. Q. Ning,Y. N. Chen,X. H. Lu,C.-C. Ling,C. M. Che,G. Y. Gao,J. H. Hao,G. Brauer,W. Anwand

2011-01-01

Abstract:Related Articles Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films J. Appl. Phys. 110, 074906 (2011) Influence of Mg-doped barriers on semipolar (201) multiple-quantum-well green light-emitting diodes Appl. Phys. Lett. 99, 141114 (2011) Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma Appl. Phys. Lett. 99, 143112 (2011) Controlled nitrogen incorporation in GaNSb alloys AIP Advances 1, 032159 (2011) Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals Appl. Phys. Lett. 99, 093108 (2011)
Structural Transition, Subgap States, and Carrier Transport in Anion-Engineered Zinc Oxynitride Nanocrystalline Films

Fenglin Xian,Jiandong Ye,Shulin Gu,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1063/1.4958294

IF: 4

2016-01-01

Applied Physics Letters

Abstract:In this work, anion alloying is engineered in ZnON nanocrystalline films, and the resultant evolution of the structural transition, subgap states, and carrier transport is investigated. A broad distribution of sub-gap states above the valence band maximum is introduced by nitrogen due to the hybridization of N 2p and O 2p orbitals. The phase transition from partially amorphous states to full crystallinity occurs above a characteristic growth temperature of 100 °C, and the localized states are suppressed greatly due to the reduction of nitrogen composition. The electronic properties are dominated by grain boundary scattering and electron transport across boundary barriers through thermal activation at band edge states at high temperatures. The conductivity below 130 K exhibits a weak temperature dependence, which is a signature of variable-range hopping conduction between localized states introduced by nitrogen incorporation.
Atomic arrangement matters: band-gap variation in composition-tunable (Ga1–xZnx)(N1–xOx) nanowires

Kai Zhang,Tao Chen,Yasir Abbas,Saad Ullah Jan,Zhaohui Zhou,Shengqi Chu,Guancai Xie,Sana Ullah,Muhammad Zain Akram,Jing Zhang,Yimin Xuan,Jian Ru Gong

DOI: https://doi.org/10.1016/j.matt.2020.12.024

IF: 18.9

2021-03-01

Matter

Abstract:We synthesized single-crystal (Ga 1–xZn x)(N 1–xO x) nanowires with fully tunable compositions (0 < x < 1) using a customized chemical vapor deposition strategy. Despite the uniform distributions of component elements at the nanometer scale, X-ray absorption fine structure analysis in combination with ab initio multiple-scattering calculation verified the existence of a strong clustering tendency, i.e., the energetic preference of the valence-matched Ga-N and Zn-O pairs, in the synthesized nanowires. The strong clustering tendency plays a dominant role in determining the electronic band structures of the nanowires, causing a continuous band-gap reduction with increasing ZnO content, which is interpreted via a type II band alignment among the intracrystalline heterojunctions formed between the incorporated clusters and the host material. This, ultimately, makes the sample with the highest ZnO content show the highest water-splitting activity. Atomic arrangement engineering will provide an additional tool for band-gap engineering of semiconductor alloys, greatly benefiting the development of new functional materials for energy conversion applications.

materials science, multidisciplinary

Bio-inspired Band Gap Engineering of Zinc Oxide by Intracrystalline Incorporation of Amino Acids

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

Uniaxial strain induced anisotropic bandgap engineering in freestanding BiFeO3 films

Strain Gradient Induced Spatially Indirect Excitons in Single Crystalline ZnO Nanowires

Band gap engineering of ZnO by amino acid capping for optoelectronic and energy applications

Band Gap Tuning of DC Reactively Sputtered ZnON Thin Films

Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm

Biaxial Stress-Dependent Optical Band Gap, Crystalline, and Electronic Structure in Wurtzite ZnO: Experimental and Ab Initio Study

Strain Tunable Ferroelectric and Dielectric Properties of BaZrO3

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Controlling the Band Gap of ZnO by Programmable Annealing

The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire

Strain-tunable direct band gap of ZnO monolayer in graphene-like honeycomb structure

Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

Size-dependent bandgap modulation of ZnO nanowires by tensile strain.

Gradient bandgap narrowing in severely deformed ZnO nanoparticles

Band gap engineering of monolayer ZrGeTe<sub>4</sub> via strain: A first-principles study

Ab-initio Study of Electronic and Lattice Dynamical Properties of monolayer ZnO under Strain

Title Ion-implantation induced nano distortion layer and its influenceon nonlinear optical properties of ZnO single crystals

Structural Transition, Subgap States, and Carrier Transport in Anion-Engineered Zinc Oxynitride Nanocrystalline Films

Atomic arrangement matters: band-gap variation in composition-tunable (Ga1–xZnx)(N1–xOx) nanowires