Band Gap Tuning of DC Reactively Sputtered ZnON Thin Films

Kiran Jose,J. G. Anjana,Venu Anand,Aswathi R. Nair

DOI: https://doi.org/10.48550/arXiv.2302.08201

2023-02-16

Abstract:Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnO$_x$N$_y$ films with varying elemental concentrations, by precisely controlling the working pressure. The band gap was rigorously analyzed using UV-Visible spectroscopy, which was complemented by EDAX spectroscopy to determine the variations in the elemental composition. The correlation between the microstructure and band gap was investigated through the application of AFM, XRD, and Raman spectroscopy, while the Urbach theorem was used to evaluate the defect states. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to regulate the band gap of zinc oxynitride (ZnO_xNy) thin films by adjusting the reactive sputtering process parameters. Specifically, the researchers developed a new direct - current reactive sputtering protocol. By precisely controlling the working pressure, ZnO_xNy thin films with different element concentrations were prepared, and the band gap was strictly analyzed using UV - visible spectroscopy. Meanwhile, the change in element composition was determined using EDAX spectroscopy. In addition, by applying atomic force microscopy (AFM), X - ray diffraction (XRD) and Raman spectroscopy techniques, the correlation between the microstructure and the band gap was studied, and the defect states were evaluated using Urbach's rule. This study reveals the intermediate structures formed during the process of adjusting the band gap, and these structures are of great significance for future research on the photonic applications of heterostructures and two - dimensional superlattices. In short, the core problem of the paper is to explore the method of effectively regulating the band gap of ZnO_xNy thin films by changing working conditions (such as nitrogen gas flow rate, sputtering power, etc.), and how this regulation affects the microstructure and properties of the material. This not only helps to understand the physical properties of ZnO_xNy thin films, but also provides a theoretical basis for optimizing their performance in optoelectronic applications.

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