Abstract:The electronic wavefunctions of an atom or molecule are affected by its interactions with its environment. These interactions dictate electronic and optical processes at interfaces, and is especially relevant in the case of thin film optoelectronic devices such as organic solar cells. In these devices, charge transport and interfaces between multiple layers occur along the thickness or vertical direction, and thus such electronic interactions are crucial in determining the device properties. Here, we introduce a new in-situ spectroscopic ellipsometry data analysis method called DART with the ability to directly probe electronic coupling due to intermolecular interactions along the thickness direction using vacuum-deposited organic semiconductor thin films as a model system. The analysis, which does not require any model fitting, reveals direct observations of electronic coupling between frontier orbitals under optical excitations leading to delocalization of the corresponding electronic wavefunctions with thickness or, equivalently, number of molecules away from the interface in C60 and MeO-TPD deposited on an insulating substrate (SiO2). Applying the same methodology for C60 deposited on phthalocyanine thin films, the analyses shows strong, anomalous features - in comparison to C60 deposited on SiO2 - of the electronic wavefunctions corresponding to specific excitation energies in C60 and phthalocyanines. Translation of such interactions in terms of dielectric constants reveals plasmonic type resonance absorptions resulting from oscillations of the excited state wavefunctions between the two materials across the interface. Finally, reproducibility, angstrom-level sensitivity and simplicity of the method are highlighted showcasing its applicability for studying electronic coupling between any vapor-deposited material systems where real-time measurements during deposition are possible.

Chemically resolved electrical measurements using x-ray photoelectron spectroscopy

Energy-Dispersive X-Ray Spectroscopy of Atomically Thin Semiconductors and Heterostructures

Element-specific electronic and structural dynamics using transient X-ray spectroscopy

Energy dispersive X-ray spectroscopy of atomically thin semiconductors

Electrochemistry of thin films with operando grazing incidence X-ray scattering: bypassing electrolyte scattering for high fidelity time resolved studies

Probing the electronic properties of gap states near the surface of heterojunctions with high sensitivity

Resolving molecular frontier orbitals in molecular junctions with kHz resolution

Atomically Resolved Real-Space Imaging of Hot Electron Dynamics

Beyond hard x-ray photoelectron spectroscopy: Simultaneous combination with x-ray diffraction

Measurement of Electron Transport Properties of Molecular Junctions Fabricated by Electrochemical and Mechanical Methods

X-ray photoelectron spectroscopy of epitaxial films and heterostructures

Time-resolved X-ray photoelectron spectroscopy techniques for the study of interfacial charge dynamics

Mass spectrometric monitoring of interfacial photoelectron transfer and imaging of active crystalline facets of semiconductors

Electron transport in single molecules measured by a distance-modulation assisted break junction method.

Understanding Fundamentals of Electrochemical Reactions with Tender X-rays: A New Lab-Based Operando X-ray Photoelectron Spectroscopy Method for Probing Liquid/solid and Gas/solid Interfaces Across a Variety of Electrochemical Systems

Spatially Resolved Electrochemistry Enabled by Thin-Film Optical Interference

Atomic-scale imaging of laser-driven electron dynamics in solids

Iontronic microscopy of a tungsten microelectrode: "seeing" ionic currents under an optical microscope

Ultrafast Time Resolved X-Ray Diffraction, Extended X-Ray Absorption Fine Structure And X-Ray Absorption Near Edge Structure

Unravelling the electrochemical double layer by direct probing of the solid/liquid interface

Direct observation and evolution of electronic coupling between organic semiconductors