Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

Radiation tolerance of the MUX64 for the High Granularity Timing Detector of ATLAS

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Radiation study of the LHCb UT front-end readout ASIC

Characteristics of the MTx optical transmitter in Total Ionizing Dose

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

ATLAS Pixel Opto-Electronics

Characterization of the CMS Endcap Timing Layer Readout Chip Prototype with Charge Injection

Design and performance of a TDC ASIC for the upgrade of the ATLAS Monitored Drift Tube detector

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Radiation hardness and quality validation of the on-detector electronics for the CMS Drift Tubes upgrade

Curing early breakdown in silicon strip sensors with radiation

The locality problem for two tastes of staggered fermions

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Radiation Hardness of Two CMOS Prototypes for the ATLAS HL-LHC Upgrade Project.

Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

Development of a Time-to-digital Converter ASIC for the Upgrade of the ATLAS Monitored Drift Tube Detector