Comparative study of halogen-doped (X Cl, Br, I) hexagonal boron nitride: A promising strategy to enhance the capacity of adsorptive desulfurization

Hongping Li,Hongshun Ran,Yujun Li,Naixia Lv,Jie Yin,Jinrui Zhang,Chao Wang,Wei Jiang,Wenshuai Zhu,Huaming Li,Hongbing Ji
DOI: https://doi.org/10.1016/j.jece.2021.105886
IF: 7.7
2021-10-01
Journal of Environmental Chemical Engineering
Abstract:<p>Heteroatom doping is an effective strategy to improve the performance of adsorbents. Here, a comparative study of halogen-doped (X=⎔Cl, Br, I) hexagonal boron nitride (h-BN) materials has been systematically performed by density functional theory (DFT) and quantum analytic methods. There are four possible doped sites for h-BN, such as edge_B, edge_N, B vacancy (B<sub>v</sub>) and N vacancy (N<sub>v</sub>). DFT results show that the doping stability for these sites are as follows: edge_B &gt; edge_N &gt; N<sub>v</sub> &gt; B<sub>v</sub>. Moreover, higher content of halogen-doped h-BN have also been considered. For the adsorptive desulfurization performance, the adsorption strength of dibenzothiophene (DBT) is estimated on all halogen-doped h-BN materials. Results show that all of the halogen-doped h-BN materials possess higher adsorptive desulfurization performance. Quantum analytic methods prove that the higher adsorptive desulfurization performance originates from the additional X···H-C hydrogen bonding interaction while the π-π interaction is maintained.</p>
engineering, chemical, environmental
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