Electronic properties and surface reactive sites of carbon and oxygen doped porous boron nitride: A DFT study
Yan Liu,Lanlan Li,Qiaoling Li,Jing Lin,Xinghua Zhang,Zunming Lu,Yuanhui Ma,Zhonglu Guo,Yang Huang,Chengchun Tang
DOI: https://doi.org/10.1016/j.diamond.2021.108802
IF: 3.806
2022-01-01
Diamond and Related Materials
Abstract:Metal-free doping is an effective way to modify the electronic band structure and regulate the physical and chemical properties of porous boron nitride (p-BN). Herein, the first principles calculation has been employed on C and O doped p-BN, and their electronic properties and stability have been discussed, respectively. In additionally, p-BN with C replaced B and O replaced N defects (named CB1ON4-p-BN) is proposed for the powerful adsorption ability of carbon monoxide (CO) with adsorption energy of 4.20 eV, which have been demonstrated to be a chemical reaction with partial electronic density of state (PDOS) analysis and the amount of charge transferring (0.190 |e|). The Highest Occupied Molecular Orbital (HOMO) of p-BN suggests the intrinsic reactivity of p-BN for most cases involving defective C sites or the atoms around the defects. The fabricated CB1ON4-p-BN has verified thermodynamically stability by the vibration frequencies, cohesive energy, and integrated crystal orbital Hamilton population (ICOHP). Our results exhibit that the gases sensitivity of p-BN can be promoted by the C and O co-doped strategies, and also will open a new way of designing high-performance CO adsorbents.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films