A generic dual d-band model for interlayer ferromagnetic coupling in transition-metal doped MnBi2Te4 family of materials

Huisheng Zhang,Jingjing Zhang,Yaling Zhang,Wenjia Yang,Yingying Wang,Xiaohong Xu,Feng Liu
DOI: https://doi.org/10.1039/d2nr03283j
IF: 6.7
2022-08-23
Nanoscale
Abstract:Realization of ferromagnetic (FM) interlayer coupling in magnetic topological insulators (TIs) of MnBi2Te4 family of materials (MBTs) may pave the way to realizing high-temperature quantum anomalous Hall effect (high-T QAHE). Here we prescribe a generic dual d-band (DDB) model to elucidate the energy difference (ΔE = EAFM -EFM) between the AFM and FM coupling in the transition-metal (TM)-doped MBTs, where the valence of TMs split into d-t2g and d-eg sub-bands. Remarkably, the DDB shows that ΔE is universally determined by the relative position of the dopant (X) and Mn d-eg/t2g bands, EX-eg/t2g-EMn-eg/t2g. If ΔEd > 0, then ΔE > 0 and the desired FM coupling is favored. This surprisingly simple rule is confirmed by first-principles calculations of hole-type 3d and 4d TM dopants. Significantly, applying the DDB model, we predict high-T QAHE in the V-doped Mn2Bi2Te5, where Curie temperature is enhanced by doubling of MnTe layer while the topological order mitigated by doping can be restored by strain.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
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