Abstract:Abstract The electronic transport behaviour of materials determines their suitability for technological applications. We develop a computationally efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 23 semiconductors, including the large 48 atom CH 3 NH 3 PbI 3 hybrid perovskite, and comparing the results against experimental measurements and more detailed scattering simulations. The Spearman rank coefficient of mobility against experiment ( r s = 0.93) improves significantly on results obtained using a constant relaxation time approximation ( r s = 0.52). We find our approach offers similar accuracy to state-of-the art methods at approximately 1/500th the computational cost, thus enabling its use in high-throughput computational workflows for the accurate screening of carrier mobilities, lifetimes, and thermoelectric power.

On the calculation of Schottky contact resistivity

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Valuations of Charging Efficiency and Critical Gap for Electron Tunnelling under Contact Electrification Model

First Principles Calculation on Quantum Transport of Au-Si 3 -Au Nanoscale Junction

Effective Neumann Boundary Condition for Boundary Layer at Ohmic Contact

Semi-analytical Model of the Contact Resistance in Two-Dimensional Semiconductors

Calculation of resistance for weak scattering, strong scattering and insulating quasi-one dimensional systems

Variation of Schottky Barrier Height Induced by Dopant Segregation Monitored by Contact Resistivity Measurements

Analysis of approaches for modeling the contact resistance on conductor interface by the finite element method

Efficient calculation of carrier scattering rates from first principles

Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

Influence of Electronic Transmission on the Electrical Transport Properties in Metal–semiconductor Contacts

Analytic Model For Minority Carrier Effects In Nanoscale Schottky Contacts

Mathematical and Computer Modeling of the Spreading Resistance Value of the Metal-semiconductor Contact

Resistor-to-Schottky barrier analytical model for ohmic contact test structures

Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method

Self-interaction errors in density functional calculations of electronic transport

General Criterion to Distinguish Between Schottky and Ohmic Contacts at the Metal/two-Dimensional Semiconductor Interface.

A Theoretical Model for Metal-Graphene Contact Resistance Using a DFT-NEGF Method.

Monte Carlo simulation of Schottky contact with direct tunnelling model

Monte carlo simulation of cu-resistivity considering size-effects