Abstract:Recently, defect luminescence-based ultralong persistent luminescent (PersL) materials have been increasingly appreciated for advanced applications. However, an in-depth understanding of trap manipulation is a big challenge in controlling trap distribution. In this work, we provide a complete understanding of defect-induced photoluminescence (PL) in Zn 2 GeO 4 and the significant role of different defects and defect complexes. Excitation-dependent tunable emissions from blue to green regions indicated different mechanisms for filling traps for different excitation energies. Time-resolved emission spectroscopy (TRES) revealed time-dependent trap distribution, shifting the PL band from blue to green. The existence of different electron–hole recombination pathways in different time windows shed light on the complex PL of Zn 2 GeO 4 . Systematic temperature-dependent PL studies imply different trapping and de-trapping processes. We demonstrate the activation energies for different trapping mechanisms and the role of negative thermal expansion (NTE) of Zn 2 GeO 4 in achieving the negative thermal quenching (NTQ) of PL. Further, the aliovalent doping of Pr 3+ was used for trap manipulation and introducing additional intermediate defect states. Density functional theory calculations as well as thermoluminescence and electron paramagnetic resonance studies revealed a reduction in defect formation energies for selective defects, four-fold increase in trap density, and trap re-shuffling to optimum trap depths (0.73 eV) on the doping of Pr 3+ . The rich trap distribution resulted in a two-fold increase in the quantum yield of green emissions (∼19%) due to Zn interstitial defects. Improved afterglow on UV charging and an increase in the afterglow time from a few minutes in undoped Zn 2 GeO 4 to an intense X-ray activated afterglow for 18 hours was observed in the Pr 3+ doped Zn 2 GeO 4 phosphor. Analysis of afterglow decay kinetics revealed the prominent trap-to-trap tunnelling mechanisms for long lifetimes. Impedance studies revealed the widening of electron channels and reduced resistance to electron movement with the incorporation of Pr 3+ ions that enhanced PersL. LED fabrication was carried out to demonstrate the potential of the Zn 2 GeO 4 phosphor for solid-state lighting. We believe that such kinetic and thermodynamic interpretation of defect chemistry will be helpful in tailoring the optoelectronic properties of native defect phosphors.

Influence of trap centers on persistent luminescence of Cr3+ or Yb3+ Co‐doped Y3Al2Ga3O12:Pr3+ ceramic phosphors

Tunable trap depth for persistent luminescence by cationic substitution in Pr <sup>3+</sup> :K <sub> 1− <i>x</i> </sub> Na <sub> <i>x</i> </sub> NbO <sub>3</sub> perovskites

Facilitating Near‐Infrared Persistent Luminescence in Cr3+‐Doped Gadolinium Gallium Garnets

Tunable trap depth for persistent luminescence by cationic substitution in Pr3+:K1−xNaxNbO3 perovskites

A Co-Doping Influence Towards Enhanced Persistent Duration of Long Persistent Phosphors

Trap engineering through chemical doping for ultralong X-ray persistent luminescence and anti-thermal quenching in Zn2GeO4

In-situ Insights into trap attributions in Fe3+-activated long persistent phosphors

Trapping Centers in CaS : Bi3 + and CaS : Eu2 + , Tm3 +

Multiple Magnification Effects of Ce3+ Ions on Near-Infrared Persistent Luminescence of Cr-Doped Laalo3

Trap engineering in LiInSi2O6:Cr,Pr by excess cristobalite silica for X-ray activated near-infrared persistent luminescence imaging in vivo

Tailoring of the trap distribution and crystal field in Cr 3+ -doped non-gallate phosphors with near-infrared long-persistence phosphorescence

Near-infrared afterglow enhancement of ZnGa2O4:Cr3+ via regulating trap distribution guided by VRBE diagram

Particle size-related limitations of persistent phosphors based on the doped Y3Al2Ga3O12 system

Effect of Nd concentration on persistent luminescence of Y3Al2Ga3O12:Ce3+,Cr3+,Nd3+ ceramics for the near-infrared region

Tunable Trap Levels Observed in La and Eu Codoped CaAl2O4‐Based Phosphor

Effect of dopant concentration on the optical characteristics of Cr3+:ZnGa2O4 transparent ceramics exhibiting persistent luminescence

Coordination Geometry‐Dependent Multi‐Band Emission and Atypically Deep‐Trap‐Dominated NIR Persistent Luminescence from Chromium‐Doped Aluminates

Trapping Centers in CaS:Bi[sup 3+] and CaS:Eu[sup 2+],Tm[sup 3+]

Persistent Luminescence of Sral2o4: Eu2+, Dy3+, Cr3+ Phosphors in the Tissue Transparency Window

Persistent Luminescence in Rare Earth Ion-Doped Gadolinium Oxysulfide Phosphors

Engineering trap distribution to achieve multicolor persistent and photostimulated luminescence from ultraviolet to near-infrared II